N-Channel MOSFET. SM3433NHQG Datasheet

SM3433NHQG MOSFET. Datasheet pdf. Equivalent

SM3433NHQG Datasheet
Recommendation SM3433NHQG Datasheet
Part SM3433NHQG
Description N-Channel MOSFET
Feature SM3433NHQG; SM3433NHQG ® N-Channel Enhancement Mode MOSFET Features Pin Description • 40V/50A, R DS(ON) = .
Manufacture Sinopower
Datasheet
Download SM3433NHQG Datasheet




Sinopower SM3433NHQG
SM3433NHQG
®
N-Channel Enhancement Mode MOSFET
Features
Pin Description
40V/50A,
R
DS(ON)
=
2.5m(max.)
@
V
GS
=10V
RDS(ON) = 4.1m(max.) @ VGS =4.5V
100% UIS + Rg Tested
Avalanche Rated
Reliable and Rugged
Lower Qg and Qgd for high-speed switching
Lower RDS(ON) to Minimize Conduction Losses
Lead Free and Green Devices Available
(RoHS Compliant)
Applications
DDDD
SS SG
DFN3.3x3.3-8(Saw-EP)
(5,6,7,8)
DD DD
(4) G
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
S SS
( 1, 2, 3 )
N-Channel MOSFET
SM3433NH
SM3433NH QG :
Assembly Material
Handling Code
Temperature Range
Package Code
SM
3433N
XXXXX
Package Code
QG : DFN3.3x3.3-8(Saw-EP)
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - May, 2015
1
www.sinopowersemi.com



Sinopower SM3433NHQG
SM3433NHQG
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
TJ
TST G
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
ID Continuous Drain Current
IDM Pulsed Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJA Thermal Resistance-Junction to Ambient
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=25°C
TC=100°C
Steady State
TA=25°C
TA=70°C
TA=25°C
TA=70°C
t 10s
Steady State c
40
±20
150
-55 to 150
50 a
50 a
50
200 b
62.5
25
2
24
19
1.78
1.14
35
70
V
°C
A
W
°C/W
A
W
°C/W
IAS d Avalanche Current, Single pulse
L=0.1mH
50 A
EAS d Avalanche Energy, Single pulse
L=0.1mH
125 mJ
Note aPackage is limited by 50A.
Note bPulse width is limited by maximum junction temperature.
Note cSurface Mounted on 1in2 pad area, t 999s.
Note dUIS tested and pulse width is limited by maximum junction temperature 150oC (initial temperature TJ = 25oC).
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - May, 2015
2
www.sinopowersemi.com



Sinopower SM3433NHQG
SM3433NHQG
®
Electrical Characteristics
(T
A
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
VGS=0V, IDS=250µA
VDS=32V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
40
-
-
1.4
-
RDS(ON) e Drain-Source On-state Resistance
Gfs Forward Transconductance
Diode Characteristics
VSD e Diode Forward Voltage
trr Reverse Recovery Time
ta Charge Time
tb Discharge Time
Qrr Reverse Recovery Charge
Dynamic Characteristics f
VGS=10V, IDS=22A
TJ=125°C
VGS=4.5V, IDS=18A
VDS=5V, IDS=22A
ISD=22A, VGS=0V
IF=10A, dlSD/dt=100A/µs
-
-
-
-
-
-
-
-
-
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics f
VGS=0V,VDS=0V, F=1MHz
VGS=0V,
VDS=20V,
Frequency=1.0MHz
VDD=20V, RL=20,
IDS=1A, VGEN=10V,
RG=1
-
-
-
-
-
-
-
-
Qg Total Gate Charge
VDS=20V, VGS=4.5V,
IDS=22A
Qg Total Gate Charge
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
VDS=20V, VGS=10V,
IDS=22A
Qgd Gate-Drain Charge
Note ePulse test; pulse width 300 µs, duty cycle 2%.
Note fGuaranteed by design, not subject to production testing.
-
-
-
-
-
Typ.
-
-
-
1.7
-
2
3
3
28
0.8
35.7
19.3
16.4
26.4
1
2620
790
70
15.8
9.3
36.6
36.5
19.3
41
4.8
9.2
5.2
Max.
-
1
30
2.5
±100
2.5
-
4.1
-
1.1
-
-
-
-
-
-
-
-
29
18
67
67
27
57
6.7
12.8
7.3
Unit
V
µA
V
nA
m
S
V
ns
nC
pF
ns
nC
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - May, 2015
3
www.sinopowersemi.com







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