N-Channel MOSFET. SM3323NHQA Datasheet

SM3323NHQA MOSFET. Datasheet pdf. Equivalent

SM3323NHQA Datasheet
Recommendation SM3323NHQA Datasheet
Part SM3323NHQA
Description N-Channel MOSFET
Feature SM3323NHQA; SM3323NHQA ® N-Channel Enhancement Mode MOSFET Features Pin Description · 30V/54A, RDS(ON)= 6mW .
Manufacture Sinopower
Datasheet
Download SM3323NHQA Datasheet




Sinopower SM3323NHQA
SM3323NHQA
®
N-Channel Enhancement Mode MOSFET
Features
Pin Description
· 30V/54A,
RDS(ON)= 6mW (Max.) @ VGS=10V
RDS(ON)= 9.7mW (Max.) @ VGS=4.5V
· Reliable and Rugged
· Lower Qg and Qgd for high-speed switching
· Lower RDS(ON) to Minimize Conduction Losses
· 100% UIS + Rg Tested
· Lead Free and Green Devices Available
(RoHS Compliant)
· ESD Protection
DDDD
S S SG
DFN3.3x3.3A-8_EP
(5,6,7,8)
DD DD
Applications
· Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
(4) G
SSS
( 1, 2, 3 )
N-Channel MOSFET
SM3323NH
SM3323NH QA :
Assembly Material
Handling Code
Temperature Range
Package Code
SM
3323N
XXXXX
Package Code
QA : DFN3.3x3.3A-8_EP
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - November, 2015
1
www.sinopowersemi.com



Sinopower SM3323NHQA
SM3323NHQA
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
TJ
TST G
IS
ID
IDM a
PD
RqJC
ID b
IDM b
PD b
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
RqJA b Thermal Resistance-Junction to Ambient
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=25°C
TC=100°C
Steady State
TA=25°C
TA=70°C
TA=25°C
TA=25°C
TA=70°C
t £ 10s
Steady State
30
±20
150
-55 to 150
16
54
34
100
26.6
10.6
4.7
13.8
11
34
1.73
1.11
40
72
V
°C
A
W
°C/W
A
W
°C/W
IAS c Avalanche Current, Single pulse
L=0.1mH
20 A
EAS c Avalanche Energy, Single pulse
L=0.1mH
20 mJ
Note aPulse width is limited by max. junction temperature.
Note bRqJA steady state t=999s.
Note cUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - November, 2015
2
www.sinopowersemi.com



Sinopower SM3323NHQA
SM3323NHQA
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSSt
Drain-Source Breakdown Voltage
(transient)
VGS=0V, IDS=250mA
VGS=0V, ID(aval)=20A
Tcase=25°C, ttransient=100ns
30
34
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
VDS=24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±20V, VDS=0V
RDS(ON) d Drain-Source On-state Resistance
VGS=10V, IDS=12A
TJ=125°C
VGS=4.5V, IDS=9A
Gfs Forward Transconductance
Diode Characteristics
VDS=5V, IDS=10A
VSD d
trr
Diode Forward Voltage
Reverse Recovery Time
ISD=10A, VGS=0V
ta Charge Time
tb Discharge Time
ISD=5A, dlSD/dt=100A/ms
Qrr Reverse Recovery Charge
Dynamic Characteristics
RG
Ciss
Coss
Crss
td ( ON)
tr
t d (OFF )
tf
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=15V,
Frequency=1.0MHz
VDD=15V, RL=15W,
IDS=1A, VGEN=10V,
RG=1W
Gate Charge Characteristics
Qg Total Gate Charge
Qg Total Gate Charge
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=15V, VGS=10V,
IDS=12A
VDS=15V, VGS=4.5V,
IDS=12A
Note dPulse test ; pulse width£300ms, duty cycle£2%.
-
-
1.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
1.7
-
5
7.6
7.5
16
0.8
11
14
25
13
1.8
750
530
37
7.8
8.4
18
17
12
5.5
1.1
1.9
2.2
Max. Unit
-V
-V
1
30 mA
2.5 V
±10 mA
6
- mW
9.7
-S
1.1 V
-
- ns
-
- nC
3W
-
- pF
-
-
- ns
-
-
18
-
- nC
-
-
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - November, 2015
3
www.sinopowersemi.com







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