N-Channel MOSFET. SM3422NSQA Datasheet

SM3422NSQA MOSFET. Datasheet pdf. Equivalent

SM3422NSQA Datasheet
Recommendation SM3422NSQA Datasheet
Part SM3422NSQA
Description N-Channel MOSFET
Feature SM3422NSQA; SM3422NSQA N-Channel Enhancement Mode MOSFET Features • 16V/30A RDS(ON)=4.9mΩ(max.)@VGS=4.5V RDS(O.
Manufacture Sinopower
Datasheet
Download SM3422NSQA Datasheet




Sinopower SM3422NSQA
SM3422NSQA
N-Channel Enhancement Mode MOSFET
Features
• 16V/30A
RDS(ON)=4.9mΩ(max.)@VGS=4.5V
RDS(ON)=6.6mΩ(max.)@VGS=2.5V
• 100% UIS + Rg Tested
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Portable Equipment and Battery Powered
Systems.
Pin Description
DDDD
SS SG
DFN3.3x3.3A-8_EP
(5,6,7,8)
DD DD
(4) G
S SS
(1,2,3)
N-Channel MOSFET
Ordering and Marking Information
SM3422NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
QA : DFN3.3x3.3A-8_EP
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM3422NS QA :
SM
3422N
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are
fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL
classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl
does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest
version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - March, 2018
1
www.sinopowersemi.com



Sinopower SM3422NSQA
SM3422NSQA
Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
16
V
±12
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
150
-55 to 150
°C
ID a Continuous Drain Current
IDM b Pulsed Drain Current
TC=25°C
TC=100°C
TC=25°C
30
A
30
75 A
PD Maximum Power Dissipation
TC=25°C
TC=100°C
31.3
W
12.5
RqJC Thermal Resistance-Junction to Case
Steady State
4 °C/W
IS Diode Continuous Forward Current
TA=25°C
1.1 A
ID Continuous Drain Current
IDM b Pulsed Drain Current
TA=25°C
TA=70°C
TA=25°C
15.2
A
12.2
60.8 A
PD c Maximum Power Dissipation
TA=25°C
TA=70°C
1.62
W
1.04
Rd
qJA
Thermal Resistance-Junction to Ambient
t ≤ 10s
Steady State
38
°C/W
77
IAS d Avalanche Current, Single pulse
L=0.1mH
24 A
EAS d Avalanche Energy, Single pulse
L=0.1mH
29 mJ
Note aMax. continuous current is limited by bonding wire.
Note bPulse width is limited by max. junction temperature.
Note cSurface Mounted on 1in2 pad area, t ≤999sec.
Note dUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - March, 2018
2
www.sinopowersemi.com



Sinopower SM3422NSQA
SM3422NSQA
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
Re
DS(ON)
Drain-Source On-state Resistance
Gfs Forward Transconductance
Diode Characteristics
VSD e Diode Forward Voltage
trr Reverse Recovery Time
ta Charge Time
tb Discharge Time
Qrr Reverse Recovery Charge
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON)
tr
td(OFF)
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics
Test Conditions
Min. Typ. Max. Unit
VGS=0V, IDS=250mA
VDS=12V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±12V, VDS=0V
VGS=4.5V, IDS=7A
TJ=125°C
VGS=2.5V, IDS=5A
VDS=5V, IDS=7A
16
-
-
0.5
-
-
-
-
-
- -V
-1
mA
- 30
0.75 1
V
- ±100 nA
3.9 4.9
5.4 -
4.9 6.6
21 - S
ISD=2A, VGS=0V
ISD=8A, dlSD/dt=100A/ms
- 0.65 1.1 V
- 34 -
- 112 - ns
- 23 -
- 13.8 - nC
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS= 8V,
Frequency=1.0MHz
VDD=8V, RL=8Ω,
IDS=1A, VGEN=10V,
RG=6Ω
-
-
-
-
-
-
-
-
3
2250
525
400
13
15
80
55
-
-
-
-
-
-
-
-
Ω
pF
ns
Qg Total Gate Charge
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=10V, VGS=4.5V,
IDS=8A
Note ePulse test ; pulse width300ms, duty cycle2%.
- 22.5 -
- 1.5 - nC
- 3.6 -
- 7.3 -
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - March, 2018
3
www.sinopowersemi.com







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