N-Channel MOSFET. SM1501GSQH Datasheet

SM1501GSQH MOSFET. Datasheet pdf. Equivalent

SM1501GSQH Datasheet
Recommendation SM1501GSQH Datasheet
Part SM1501GSQH
Description Dual N-Channel MOSFET
Feature SM1501GSQH; SM1501GSQH Features · 20V/0.55A , RDS(ON)= 800mW(max.) @ VGS=4.5V RDS(ON)= 1100mW(max.) @ VGS=2.5V R.
Manufacture Sinopower
Datasheet
Download SM1501GSQH Datasheet




Sinopower SM1501GSQH
SM1501GSQH
Features
· 20V/0.55A ,
RDS(ON)= 800mW(max.) @ VGS=4.5V
RDS(ON)= 1100mW(max.) @ VGS=2.5V
RDS(ON)= 1450mW(max.) @ VGS=1.8V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
· ESD Protection
®
Dual N-Channel Enhancement Mode MOSFET
Pin Description
S2
G2
D1
D2
G1
S1
Top View of SOT-563
(6)D1
(3)D2
Applications
(2) (5)
G1 G2
· Power Supply Converter Circuits.
· Load/Power Switches.
· Battery Management.
Ordering and Marking Information
(1)S1
(4)S2
N-Channel MOSFET
SM1501GS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
QH : SOT-563
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM1501GS QH :
01
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - June, 2016
1
www.sinopowersemi.com



Sinopower SM1501GSQH
SM1501GSQH
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Common Ratings
VDSS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
ID Continuous Drain Current
IDM a Pulsed Drain Current
PD Maximum Power Dissipation
RqJA b Thermal Resistance-Junction to Ambient
Note aPulse width limited by max. junction temperature.
Note bSurface Mounted on 1in2 pad area..
TA=25°C
TA=25°C
TA=70°C
TA=25°C
TA=25°C
TA=70°C
Steady State
Rating
20
±12
150
-55 to 150
0.35
0.55
0.45
1
0.41
0.26
300
Unit
V
°C
A
A
A
W
°C/W
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - June, 2016
2
www.sinopowersemi.com



Sinopower SM1501GSQH
SM1501GSQH
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) d Drain-Source On-state Resistance
Diode Characteristics
VSD c Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics c
VGS=0V, IDS=250mA
VDS=16V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±12V, VDS=0V
VGS=4.5V, IDS=600mA
VGS=2.5V, IDS=500mA
VGS=1.8V, IDS=100mA
ISD=350mA, VGS=0V
ISD=1A, dlSD/dt=100A/ms
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics d
VGS=0V,
VDS=10V,
Frequency=1.0MHz
VDD=10V, RL=10W,
IDS=1A, VGEN=4.5V,
RG=6W
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=10V, VGS=4.5V,
IDS=1A
Note cPulse test ; pulse width£300ms, duty cycle£2%.
Note dGuaranteed by design, not subject to production testing.
Min. Typ. Max. Unit
20 -
-V
- -1
- - 30 mA
0.6 0.95 1.3 V
- - ±10 mA
- 650 800
- 800 1100 mW
- 1100 1450
- 0.8 1.3 V
- 8.2 - ns
- 2.5 - nC
- 28 37
- 8 - pF
-3-
- 1.4 2.6
- 9.9 17.9
ns
- 10.6 19.2
- 2.3 4.2
- 0.74 1.04
- 0.44 -
nC
- 0.1 -
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - June, 2016
3
www.sinopowersemi.com







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