N-Channel MOSFET. SM4040DSK Datasheet

SM4040DSK MOSFET. Datasheet pdf. Equivalent

SM4040DSK Datasheet
Recommendation SM4040DSK Datasheet
Part SM4040DSK
Description Dual N-Channel MOSFET
Feature SM4040DSK; SM4040DSK ® Dual N-Channel Enhancement Mode MOSFET Features · 40V/7A, RDS(ON) = 22mW (max.) @ VGS .
Manufacture Sinopower
Datasheet
Download SM4040DSK Datasheet




Sinopower SM4040DSK
SM4040DSK
®
Dual N-Channel Enhancement Mode MOSFET
Features
· 40V/7A,
RDS(ON) = 22mW (max.) @ VGS = 10V
RDS(ON) = 27mW (max.) @ VGS = 4.5V
· 100% UIS + Rg Tested
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Applications
· Power Management in Note book.
· Battery Powered System.
· DC/DC Converter.
· Load Switch.
Pin Description
D1 D1
D2
D2
S1
G1
S2
G2
Top View of SOP-8
(8) (7)
D1 D1
(6) (5)
D2 D2
(2) (4)
G1 G2
S1 S2
(1) (3)
N-Channel MOSFET
Ordering and Marking Information
SM4040DS
SM4040DS K :
Assembly Material
Handling Code
Temperature Range
Package Code
4040DS
XXXXX
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2015
1
www.sinopowersemi.com



Sinopower SM4040DSK
SM4040DSK
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
40 V
±20 V
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
IS Diode Continuous Forward Current
ID Continuous Drain Current
IDM a Pulse Drain Current Tested
TA=25°C
TA=25°C
TA=70°C
TA=25°C
150
-55 to 150
2
7
5.8
28
°C
°C
A
A
A
PD Maximum Power Dissipation
RqJL Thermal Resistance-Junction to Lead
RqJA Thermal Resistance-Junction to Ambient
TA=25°C
TA=70°C
Steady State
t £ 10s
Steady State b
2
W
1.28
50 °C/W
62.5
°C/W
110
IAS c Avalanche Current, Single pulse
L=0.5mH
10 A
EAS c Avalanche Energy, Single pulse
L=0.5mH
25 mJ
Note aPulse width limited by max. junction temperature.
Note bSurface Mounted on 1in2 pad area, t =999sec.
Note cUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2015
2
www.sinopowersemi.com



Sinopower SM4040DSK
SM4040DSK
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) c Drain-Source On-state Resistance
Diode Characteristics
VGS=0V, IDS=250mA
VDS=32V, VGS=0V
TJ =85° C
VDS=VGS, IDS=250mA
VGS=±20V, VDS=0V
VGS=10V, IDS=6A
VGS=4.5V, IDS=5A
VSD c Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics d
ISD=1A, VGS=0V
IDS=6A, dlSD/dt=100A/ms
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics d
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=20V,
Frequency=1.0MHz
VDD=20V, RL=20W,
IDS=1A, VGEN=10V,
RG=6W
Qg Total Gate Charge
VDS=20V, VGS=10V,
IDS=6A
Qg Total Gate Charge
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
VDS=20V, VGS=4.5V,
IDS=6A
Qgd Gate-Drain Charge
Note cPulse test ; pulse width£300ms, duty cycle£2%.
Note dGuaranteed by design, not subject to production testing.
Min.
40
-
-
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
2
-
17
19
0.75
13
8.7
2.5
815
95
60
7.8
6.9
22.4
4.8
15.7
7.5
1.85
3.24
2.75
Max.
-
1
30
2.5
±100
22
27
1.1
-
-
-
-
-
-
-
-
-
-
22
10.5
-
-
-
Unit
V
mA
V
nA
mW
V
ns
nC
W
pF
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2015
3
www.sinopowersemi.com







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