N-Channel MOSFET. SM3380EHQG Datasheet

SM3380EHQG MOSFET. Datasheet pdf. Equivalent

SM3380EHQG Datasheet
Recommendation SM3380EHQG Datasheet
Part SM3380EHQG
Description Dual N-Channel MOSFET
Feature SM3380EHQG; SM3380EHQG ® Dual N-Channel Enhancement Mode MOSFET Features · Channel 1 30V/18A, RDS(ON) = 10.8mW.
Manufacture Sinopower
Datasheet
Download SM3380EHQG Datasheet




Sinopower SM3380EHQG
SM3380EHQG
®
Dual N-Channel Enhancement Mode MOSFET
Features
· Channel 1
30V/18A,
RDS(ON) = 10.8mW (max.) @ VGS = 10V
RDS(ON) = 17.5mW (max.) @ VGS = 4.5V
· Channel 2
30V/18A,
RDS(ON) = 10mW (max.) @ VGS = 10V
RDS(ON) = 16mW (max.) @ VGS = 4.5V
· 100% UIS Tested
· ESD Protection
· Reliable and Rugged
· Lead Free Available (RoHS Compliant)
Applications
· Power Management in Desktop Computer or
DC/DC Converters.
Pin Description
G2S2S2S2
G1D1D1D1
S1/D2
D1
DFN3x3E-8_EP2
D1
(2)(3) (4)
G1 (1)
G2
(8)
S1/D2
S2 (5)(6)(7)
N-Channel MOSFET
Ordering and Marking Information
SM3380EH
Assembly Material
Handling Code
Temperature Range
Package Code
SM
SM3380EH QG :
3380E
XXXXX
Package Code
QG : DFN3x3E-8_EP2
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - February, 2016
1
www.sinopowersemi.com



Sinopower SM3380EHQG
SM3380EHQG
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Channel 1 Channel 2 Unit
Common Ratings
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
30 30
V
±20 ±20
TJ
TSTG
IS
ID a
IDM b
PD
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Continuous Drain Current
Pulse Drain Current Tested
Maximum Power Dissipation
TC=25°C
TC=25°C
TC=25°C
TC=25°C
150
-55 to 150
55
18 * 18 *
45 b 45 b
20 20
°C
A
A
A
W
RqJC Thermal Resistance-Junction to Case
ID c Continuous Drain Current
IDM Pulse Drain Current Tested
PD c Maximum Power Dissipation
RqJA Thermal Resistance-Junction to Ambient
Steady State
TA=25°C
TA=70°C
TA=25°C
TA=25°C
TA=70°C
t £ 10s
Steady State c
6
8.4
6.7
33.5
1.14
0.7
66
110
6 °C/W
9.1
A
7.3
36 A
1.3
W
0.8
60
°C/W
100
IAS d Avalanche Current, Single pulse
L=0.1mH
L=0.5mH
15 15
A
99
EAS d Avalanche Energy, Single pulse
L=0.1mH
L=0.5mH
11.25
20.3
11.25
20.3
mJ
Note a,*Max. continuous current is limited by bonding wire.
Note bPulse width is limited by max. junction temperature.
Note cRqJA steady state t=999s.
Note dUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - February, 2016
2
www.sinopowersemi.com



Sinopower SM3380EHQG
SM3380EHQG
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) e Drain-Source On-state Resistance
Diode Characteristics
VSD e Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics f
VGS=0V, IDS=250mA
VDS=24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±20V, VDS=0V
VGS=10V, IDS=10A
VGS=4.5V, IDS=8A
ISD=5A, VGS=0V
IDS=10A, dlSD/dt=100A/ms
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics f
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=15V,
Fr equenc y=1.0MHz
VDD=15V, RL=15W,
IDS=1A, VGEN=10V,
RG=6W
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=15V, VGS=10V,
IDS=10A
Note ePulse test ; pulse width£300ms, duty cycle£2%.
Note fGuaranteed by design, not subject to production testing.
Channel 1
Min. Typ. Max.
30 -
-
--1
- - 30
1.4 1.8 2.5
- - ±10
- 9 10.8
- 13.5 17.5
- 0.8 1.1
- 20.5 -
- 7.2 -
- 1.35 2.5
- 455 600
- 318 -
- 22 -
- 8.5 16
- 10 18
- 14 26
- 10.6 19
- 8 12
- 1.6 -
- 1.2 -
Unit
V
mA
V
mA
mW
V
ns
nC
W
pF
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - February, 2016
3
www.sinopowersemi.com







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