N-Channel MOSFET. SM9987DSQ Datasheet

SM9987DSQ MOSFET. Datasheet pdf. Equivalent

SM9987DSQ Datasheet
Recommendation SM9987DSQ Datasheet
Part SM9987DSQ
Description Dual N-Channel MOSFET
Feature SM9987DSQ; SM9987DSQ ® Dual N-Channel Enhancement Mode MOSFET Features · 20V/7.5A, RDS(ON)= 12.8mW(max.) @ VG.
Manufacture Sinopower
Datasheet
Download SM9987DSQ Datasheet




Sinopower SM9987DSQ
SM9987DSQ
®
Dual N-Channel Enhancement Mode MOSFET
Features
· 20V/7.5A,
RDS(ON)= 12.8mW(max.) @ VGS= 4.5V
RDS(ON)= 13mW(max.) @ VGS= 4V
RDS(ON)= 15.1mW(max.) @ VGS= 3.1V
RDS(ON)= 16.8mW(max.) @ VGS= 2.5V
· ESD protected
· 100% UIS + Rg Tested
· Reliable and Rugged
· Lead Free Available (RoHS Compliant)
Pin Description
D1D1D2D2
S1G1S2G2
Top View of DFN3x3C-8
D1(7) D1(8)
D2(5) D2(6)
Applications
· Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
(2) (4)
G1 G2
S1(1)
S2(3)
N-Channel MOSFET
Ordering and Marking Information
SM9987DS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
Q : DFN3x3C-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM9987DS Q :
SM
9987D
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2017
1
www.sinopowersemi.com



Sinopower SM9987DSQ
SM9987DSQ
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
20
V
±12
TJ
TSTG
Maximum Junction Temperature
Storage Temperature Range
150
-55 to 150
°C
ID Continuous Drain Current
IDM a Pulsed Drain Current
TA=25°C
TA=25°C
7.5
A
30
IS Diode Continuous Forward Current
1A
PD Maximum Power Dissipation
TA=25°C
TA=70°C
1
W
0.6
RqJA b Thermal Resistance-Junction to Ambient
Steady State
126 °C/W
IAS c
EAS c
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
L=0.1mH
L=0.1mH
14 A
9.8 mJ
Note aPulse width limited by max. junction temperature.
Note bSurface Mounted on 1in2 pad area, RqJA steady state t=999s.
Note cUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2017
2
www.sinopowersemi.com



Sinopower SM9987DSQ
SM9987DSQ
®
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) d Drain-Source On-state Resistance
Diode Characteristics
VSD d Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics e
VGS=0V, IDS=250mA
VDS=16V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±12V, VDS=0V
VGS=4.5V, IDS=7.5A
VGS=4V, IDS=7A
VGS=3.1V, IDS=6A
VGS=2.5V, IDS=3A
20
-
-
0.5
-
-
-
-
-
ISD=3A, VGS=0V
ISD=7.5A, dlSD/dt=100A/ms
-
-
-
- -V
-1
- 30 mA
0.7 1.0 V
- ±20 mA
10.2 12.8 mW
10.4 13.0 mW
11.2 15.1 mW
12.4 16.8 mW
0.7 1.1 V
10 - ns
4 - nC
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
VGS=0V,VDS=0V,f=1MHz - 12.2 24.4 W
VGS=0V,
VDS=10V,
Frequency=1.0MHz
- 911 1184
- 152 - pF
- 123 -
VDD=10V, RL=10W,
IDS=1A, VGEN=10V,
RG=6W
-7-
- 14 -
ns
- 91 -
- 48 -
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=10V, VGS=10V,
IDS=7.5A
- 22 28.6
- 0.9 -
- 3.4 -
Note dMax. continuous current is limited by bonding wire. Pulse width limited by max. junction temperature.
Note eGuaranteed by design, not subject to production testing.
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - July, 2017
3
www.sinopowersemi.com







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