Document
SM9998DSQG
®
Dual N-Channel Enhancement Mode MOSFET
Features
· 20V/9.7A,
RDS(ON)= 7.5mW (Max.) @ VGS=4.5V RDS(ON)= 7.9mW (Max.) @ VGS=4V RDS(ON)= 8.2mW (Max.) @ VGS=3.7V RDS(ON)= 8.7mW (Max.) @ VGS=3.1V RDS(ON)= 9.9mW (Max.) @ VGS=2.5V
· ESD protection · 100% UIS Tested · Reliable and Rugged · Lead Free and Green Devices Available
(RoHS Compliant)
Applications
· Power Management in Notebook Computer,
Portable Equipment and Battery Powered Systems.
· One Cell Li-ion Battery Pack.
Pin Description
S2 S2G2
S1 S1G1
DFN2x3A-6_EP
DD
(3) (4) G1 G2
S1 S1 (1) (2)
S2 S2 (5) (6)
N-Channel MOSFET
Ordering and Marking Information
SM9998DS
SM9998DS QG :
9998I XXXXX
Assembly Material Handling Code Temperature Range
Package Code
Package Code QG : DFN2x3A-6_EP
Operating Junction Temperature Range C : -55 to 150 oC
Handling Code TR : Tape & Reel
Assembly Material G : Halogen and Lead Free Device
X - Internal Code XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding com.