N-Channel MOSFET. SM7360EKQG Datasheet

SM7360EKQG MOSFET. Datasheet pdf. Equivalent

SM7360EKQG Datasheet
Recommendation SM7360EKQG Datasheet
Part SM7360EKQG
Description Dual N-Channel MOSFET
Feature SM7360EKQG; SM7360EKQG ® Dual N-Channel Enhancement Mode MOSFET Features · Channel 1 (ESD Protection) 30V/83A,.
Manufacture Sinopower
Datasheet
Download SM7360EKQG Datasheet




Sinopower SM7360EKQG
SM7360EKQG
®
Dual N-Channel Enhancement Mode MOSFET
Features
· Channel 1 (ESD Protection)
30V/83A,
RDS(ON) = 3mW (max.) @ VGS = 10V
RDS(ON) = 5.6mW (max.) @ VGS = 4.5V
· Channel 2 (Integrated Schottky diode)
30V/85A,
RDS(ON) = 1.3mW (max.) @ VGS =10V
RDS(ON) = 2.0mW (max.) @ VGS =4.5V
· 100% UIS + Rg Tested
· Dual Dies Package and Minimize Board Space
· Lower Qg and Qgd for High-Speed Switching
· Lower RDS(ON) to Minimize Conduction Losses
· Reliable and Rugged
· Lead Free Available (RoHS Compliant)
Applications
· Power Management in Desktop Computer or
DC/DC Converters.
Pin Description
G2S2S2S2
G1D1D1D1
S(1P/iDn 29)
D1
DFN5x6D-8_EP2
Pin1
D1
(2) (3) (4)
S1/D2
G1 (1)
G2
(8)
S2 (5)(6)(7)
N-Channel MOSFET
Ordering and Marking Information
SM7360EK
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
QG : DFN5x6D-8_EP2
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM7360EK QG :
7360EK
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - September, 2015
1
www.sinopowersemi.com



Sinopower SM7360EKQG
SM7360EKQG
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Channel 1 Channel 2 Unit
Common Ratings
VDSS Drain-Source Voltage
30 V
VGSS Gate-Source Voltage
±20 V
TJ Maximum Junction Temperature
150 °C
TSTG Storage Temperature Range
-55 to 150
°C
IS Diode Continuous Forward Current
30 75 A
ID Continuous Drain Current
TC=25°C
TC=100°C
83
52
85a
85a A
IDMb Pulse Drain Current Tested
TC=25°C
200 300 A
PD Maximum Power Dissipation
TC=25°C
TC=100°C
35
14
83
W
33
RqJC Thermal Resistance-Junction to Case
Steady State
3.5
1.5 °C/W
ID Continuous Drain Current
TA=25°C
TA=70°C
17 25
13.6 20
A
PD Maximum Power Dissipation
TA=25°C
TA=70°C
1.38 1.38
W
0.88 0.88
RqJAc
Thermal Resistance-Junction to Ambient
t £ 10s
Steady State
45
90
41
°C/W
90
IAS d Avalanche Current, Single pulse (L=0.1mH)
30 50 A
EAS d Avalanche Energy, Single pulse (L=0.1mH)
45 125 mJ
Note a: Package is limited to 85A.
Note b: Pulse width is limited by max. junction temperature.
Note c: Surface mounted on 1in2 pad area, steady state t=999s.
Note d: UIS tested and pulse width are limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - September, 2015
2
www.sinopowersemi.com



Sinopower SM7360EKQG
SM7360EKQG
®
Channel 1 Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Param e ter
Test Conditions
C hannel 1
Min. Typ. Max.
Static Characteristics
B VDS S Drain-Source Break down Voltage VGS=0V , IDS=250mA
30 -
-
BV DS St
D rain - S ou rce
(transient)
B r ea kd o w n
Voltage VGS=0V , ID(aval)=30A
Tcase=25°C, ttransi ent=100ns
34
-
-
Unit
V
V
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IG SS Gate Leakage Current
RDS(ON) e Drain-Source On-state Resistance
Gfs Forward Transconductance
D iode C haracteristics
VDS=24V, VGS =0V
TJ=85°C
VDS=VGS , IDS=250mA
VGS=±20V, V DS= 0V
VGS=10V, IDS=13A
TJ=125°C
VGS=4.5V, IDS=11A
VDS=5V, IDS=11A
V SD e Diode Forward V oltage
trr Reverse Recovery Time
ta Charge Time
tb Discharge Time
Qrr Reverse Recovery Charge
D ynamic Characteristics f
ISD=13A , V GS=0V
IDS=13A , dlSD/dt=100A/ms
VD D=1 5 V
R G Gate Resistance
C iss Input Capacitanc e
Coss Output Capacitanc e
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(O FF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics f
VGS=0V ,VDS=0V,F=1M Hz
VGS=0V ,
VDS=15V,
Frequency=1.0MHz
VDD=15V , RL=15W,
IDS=1A, VGEN=10V,
RG=1W
Qg Total Gate C harge
VDS=15V, VGS =4.5V,
IDS=13A
Qg Total Gate C harge
Qgth Threshold Gate Charge
Qgs Gate-Source Charge
VDS=15V, VGS =10V,
IDS=13A
Qgd Gate-Drain Charge
Note e: Pulse test ; pulse width£300ms, duty cycle£2%.
Note f: Guaranteed by design, not sub ject to production testing.
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1.4
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-
-
-
-
-
-
-
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-
-
-
-
-
-
-
-
-1
- 30 mA
1.7 2.5 V
- ±10 mA
2.5 3
3.6 - mW
4.2 5.6
22 - S
0.8 1.1 V
33 -
16 - ns
17 -
19 - nC
0.9
1200
770
60
8.8
10.6
22
29
1.8
1560
-
-
-
-
-
-
W
pF
ns
9.3 -
19 -
1.3 - nC
2-
4.3 -
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - September, 2015
3
www.sinopowersemi.com







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