P-Channel MOSFET. SM6107PSU Datasheet

SM6107PSU MOSFET. Datasheet pdf. Equivalent

SM6107PSU Datasheet
Recommendation SM6107PSU Datasheet
Part SM6107PSU
Description P-Channel MOSFET
Feature SM6107PSU; SM6107PSU ® P-Channel Enhancement Mode MOSFET Features Pin Description • -60V/-26A, RDS(ON)= 40.
Manufacture Sinopower
Datasheet
Download SM6107PSU Datasheet




Sinopower SM6107PSU
SM6107PSU
®
P-Channel Enhancement Mode MOSFET
Features
Pin Description
-60V/-26A,
RDS(ON)= 40m(max.) @ VGS=-10V
R=
DS(ON)
54m(max.)
@
V =-4.5V
GS
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
100% UIS Tested
Applications
DC/DC Converter.
Power Management.
Load Switch.
Drain 4
2 3 Source
1 Gate
Top View of TO-252-3
D
G
S
P-Channel MOSFET
Ordering and Marking Information
SM6107PS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
U : TO-252-3
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM6107PS U :
SM6107PS
XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2014
1
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Sinopower SM6107PSU
SM6107PSU
®
Absolute
Maximum
Ratings
(T
A
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
-60
±20 V
TJ Maximum Junction Temperature
150 °C
TSTG
Storage Temperature Range
-55 to 150
°C
IS Diode Continuous Forward Current
-13 A
IAS a Avalanche Current, Single pulse
L=0.5mH
-17 A
EAS a
Avalanche Energy, Single pulse
L=0.5mH
72 mJ
IDP b Pulse Drain Current Tested
TC=25°C
-80 c
ID Continuous Drain Current
TC=25°C
TC=100°C
-26 A
-16
PD Maximum Power Dissipation
TC=25°C
TC=100°C
54
W
21
RθJC Thermal Resistance-Junction to Case
2.3 °C/W
ID Continuous Drain Current
TA=25°C
TA=70°C
-5.3
A
-4.2
PD Maximum Power Dissipation
TA=25°C
TA=70°C
2.2
W
1.4
RθJA d Thermal Resistance-Junction to Ambient
Steady State
55
°C/W
Note aUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note bPulse width limited by max. junction temperature.
Note cWire limited.
Note dRθJA steady state t=999s. RθJA is measured with the device mounted on 1in2, FR-4 board with 2oz. Copper.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2014
2
www.sinopowersemi.com



Sinopower SM6107PSU
SM6107PSU
®
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) e Drain-Source On-state Resistance
Diode Characteristics
VSD e Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics f
VGS=0V, IDS=-250µA
VDS=-48V, VGS=0V
TJ=85°C
VDS=VGS, IDS=-250µA
VGS=±20V, VDS=0V
VGS=-10V, IDS=-20A
VGS=-4.5V, IDS=-20A
-60
-
-
-1.3
-
-
-
ISD=-1A, VGS=0V
ISD=-20A, dlSD/dt=100A/µs
-
-
-
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics f
VGS=0V,VDS=0V,f=1MHz
VGS=0V,
VDS=-30V,
Frequency=1.0MHz
VDD=-30V, RL=30,
IDS=-1A, VGEN=-10V,
RG=6
-
-
-
-
-
-
-
-
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-30V, VGS=-10V,
IDS=-20A
Note ePulse test; pulse width300µs, duty cycle2%.
Note fGuaranteed by design, not subject to production testing.
-
-
-
Typ.
-
-
-
-1.8
-
32
40
-0.7
23
22
8
1416
142
85
10
9
88
42
32
3.6
8.3
Max.
-
1
-30
-2.3
±100
40
54
-1
-
-
16
1840
-
-
18
16
158
76
45
-
-
Unit
V
µA
V
nA
m
m
V
ns
nC
pF
ns
nC
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2014
3
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