P-Channel MOSFET. SM4027PSU Datasheet

SM4027PSU MOSFET. Datasheet pdf. Equivalent

SM4027PSU Datasheet
Recommendation SM4027PSU Datasheet
Part SM4027PSU
Description P-Channel MOSFET
Feature SM4027PSU; SM4027PSU ® P-Channel Enhancement Mode MOSFET Features • -40V/-74A, RDS(ON)= 8mΩ (max.) @ VGS=-2.
Manufacture Sinopower
Datasheet
Download SM4027PSU Datasheet




Sinopower SM4027PSU
SM4027PSU
®
P-Channel Enhancement Mode MOSFET
Features
-40V/-74A,
RDS(ON)= 8m(max.) @ VGS=-20V
R=
DS(ON)
9.4m
(max.)
@
V =-10V
GS
RDS(ON)= 15m(max.) @ VGS=-4.5V
HBM ESD capability level of 8KV typical
100% UIS + Rg Tested
Reliable and Rugged
Lead Free and Green Devices Available (RoHS
Compliant)
Note : The diode connected between the gate and
source serves only as protection against ESD.
No gate overvoltage rating is implied.
Pin Description
D
S
G
Top View of TO-252-2
D
G
Applications
Power Management in LCD TV Inverter.
Ordering and Marking Information
S
P-Channel MOSFET
SM4027PS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
UTO-252-2
Operating
C-55
Jtuon1ct5io0noCTemperature
Range
Handling Code
TRTape & Reel
Assembly Material
GHalogen and Lead Free Device
SM4027PS U:
SM4027PS
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - June, 2015
1
www.sinopowersemi.com



Sinopower SM4027PSU
SM4027PSU
®
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
VD S S
VGSS
ID a
IDP a
ID c
IDP c
IS c
IAS b
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (VGS=-10V)
300µs Pulsed Drain Current Tested
Continuous Drain Current (VGS=-10V)
300µs Pulsed Drain Current Tested
Diode Continuous Forward Current
Avalanche Current, Single pulse
TA=25°C
TA=70°C
TA=25°C
TC=25°C
TC=100°C
TC=25°C
L=0.5mH
-40
±25
-20
-16
-81
-74
-47
-298
-37
-25
V
A
EAS b Avalanche Energy, Single pulse
L=0.5mH
156 mJ
TJ
TSTG
PD a
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
PD c Maximum Power Dissipation
TA=25°C
TA=70°C
TC=25°C
TC=100°C
150
-55 to 150
6.3
4.0
83
33
°C
W
RθJA a Thermal Resistance-Junction to Ambient
t 10s
Steady State
20
60 °C/W
RθJC c Thermal Resistance-Junction to Case
Steady State
1.5
Note aSurface Mounted on 1in2 pad area, t 10sec. RθJA steady state t = 999s.
Note bUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note cThe power dissipation PD is based on TJ(MAX) = 150oC, and it is useful for reducing junction-to-case thermal
resistance (RθJC) when additional heat sink is used.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - June, 2015
2
www.sinopowersemi.com



Sinopower SM4027PSU
SM4027PSU
®
Electrical Characteristics
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) d Drain-Source On-state Resistance
Diode Characteristics
VSDd Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics e
VGS=0V, IDS=-250µA
VDS=-32V, VGS=0V
TJ=85°C
VDS=VGS, IDS=-250µA
VGS=±20V, VDS=0V
VGS=-20V, IDS=-25A
VGS=-10V, IDS=-25A
VGS=-4.5V, IDS=-15A
ISD=-1A, VGS=0V
ISD=-25A, dlSD/dt=100A/µs
-40
-
-
-1.5
-
-
-
-
-
-
-
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=-20V,
Frequency=1.0MHz
VDD=-20V, RL=20,
IDS=-1A, VGEN=-10V,
RG=6
-
-
-
-
-
-
-
-
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-20V, VGS=-10V,
IDS=-25A
Note dPulse test; pulse width300µs, duty cycle2%.
Note eGuaranteed by design, not subject to production testing.
-
-
-
Typ.
-
-
-
-2
-
6.6
7.5
11
-0.75
23
10
3.8
2780
426
331
17
14
59
22
59
8
16
Max.
-
-1
-30
-2.5
±10
8
9.4
15
-1
-
-
7.6
3614
-
-
31
25
106
40
83
-
-
Unit
V
µA
V
µA
m
V
ns
nC
pF
ns
nC
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - June, 2015
3
www.sinopowersemi.com







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