BFG480W

DISCRETE SEMICONDUCTORS M3D124 BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 1998 Oct 21 Philips Semiconductors Product specification NPN wideband transistor FEATURES High power gain High efficiency Low noise figure High transition frequency Emitter is thermal lead Low feedback capacitance Linear and non-linear operation. handbook, halfpage BFG480W PINNING PIN 1 2 3 4 emitter base emitter collector DESCRIPTION 3 4 APPLICATIONS RF front end with high linearity system demands (CDMA) Common emitter class AB driver. DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. QUICK REFERENCE DATA SYMBOL VCEO IC Ptot fT Gmax F Gp ηC PARAMETER collector-emitter voltage open base collector current (DC) total power dissipation transition frequency maximum gain noise figure power gain collector efficiency Ts ≤ 60 °C CONDITIONS − 80 − IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C 21 IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C 16 IC = 8 mA; VCE = 2 V; f = 2 GHz; ΓS = Γopt Pulsed; class-AB; δ < 1 : 2; tp = 5 ms; VCE = 3.6 V; f = 2 GHz; PL = 100 mW Pulsed; class-AB; δ < 1 : 2; tp = 5 ms; VCE = 3.6 V; f = 2 GHz; PL = 100 mW CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, an...