P-Channel MOSFET. SM2403PSAN Datasheet

SM2403PSAN MOSFET. Datasheet pdf. Equivalent

SM2403PSAN Datasheet
Recommendation SM2403PSAN Datasheet
Part SM2403PSAN
Description P-Channel MOSFET
Feature SM2403PSAN; SM2403PSAN Features · -20V/-3.3A, RDS(ON)= 90mW (Max.) @ VGS=-4.5V RDS(ON)= 135mW (Max.) @ VGS=-2.5V.
Manufacture Sinopower
Datasheet
Download SM2403PSAN Datasheet




Sinopower SM2403PSAN
SM2403PSAN
Features
· -20V/-3.3A,
RDS(ON)= 90mW (Max.) @ VGS=-4.5V
RDS(ON)= 135mW (Max.) @ VGS=-2.5V
RDS(ON)= 240mW (Max.) @ VGS=-1.8V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
P-Channel Enhancement Mode MOSFET
Pin Description
D
S
G
Top View of SOT-23N
D
Applications
· Load switch.
· For Portable Equipment.
· For Networking application.
G
S
P-Channel MOSFET
Ordering and Marking Information
SM2403PS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
AN : SOT-23N
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM2403PS AN :
B03XX
XX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2015
1
www.sinopowersemi.com



Sinopower SM2403PSAN
SM2403PSAN
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VD SS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
ID* Continuous Drain Current
IDM a
IS*
TJ
TSTG
PD*
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
RqJA* Thermal Resistance-Junction to Ambient
Note *Surface Mounted on 1in2 pad area, t £ 10sec.
Note aPulse width limited by max. junction temperature.
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
t £ 10s
Steady state
Rating
-20
±12
-3.3
-2.6
-13.2
-10.4
-1
150
-55 to 150
1.4
0.9
90
125
Unit
V
A
°C
W
°C/W
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2015
2
www.sinopowersemi.com



Sinopower SM2403PSAN
SM2403PSAN
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250mA
ID S S
Zero Gate Voltage Drain Current VDS=-16V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=-250mA
IGSS Gate Leakage Current
VGS=±10V, VDS=0V
VGS=-4.5V, IDS=-3A
RDS(ON) b Drain-Source On-State Resistance VGS=-2.5V, IDS=-2.1A
VGS=-1.8V, IDS=-0.9A
VSD b Diode Forward Voltage
Gate Charge Characteristics c
ISD=-1A, VGS=0V
-20
-
-
-0.5
-
-
-
-
-
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Dynamic Characteristics c
VDS=-10V, VGS=-4.5V,
IDS=-3.3A
-
-
-
RG Gate Resistance
VGS=0V,VDS =0V,F=1MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=-10V,
Frequency=1.0MHz
t d( ON)
tr
td (OF F)
tf
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDD=-10V, RL=10W,
IDS=-1A, VGEN=-4.5V,
RG=6W
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD=-3.3A, dlSD/dt =100A/µs
Note bPulse test; pulse width£300ms, duty cycle£2%.
Note cGuaranteed by design, not subject to production testing.
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-0.7
-
70
100
160
-0.8
4.6
0.3
1.9
6.8
310
70
60
4.9
14.2
22
9
22
8
Max.
-
-1
-30
-1
±10
90
135
240
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
mA
V
mA
mW
V
nC
W
pF
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - November, 2015
3
www.sinopowersemi.com







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