P-Channel MOSFET. SM2691PSC Datasheet

SM2691PSC MOSFET. Datasheet pdf. Equivalent

SM2691PSC Datasheet
Recommendation SM2691PSC Datasheet
Part SM2691PSC
Description P-Channel MOSFET
Feature SM2691PSC; SM2691PSC ® P-Channel Enhancement Mode MOSFET Features · -150V/-1.1A , RDS(ON)= 750mW (Max.) @ VGS.
Manufacture Sinopower
Datasheet
Download SM2691PSC Datasheet




Sinopower SM2691PSC
SM2691PSC
®
P-Channel Enhancement Mode MOSFET
Features
· -150V/-1.1A ,
RDS(ON)= 750mW (Max.) @ VGS=-10V
· 100% UIS + Rg Tested
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
S
D
D
G
D
D
Top View of SOT-23-6
(1,2,5,6)
DD DD
Applications
· Load switch for Networking application.
(3)G
(4)S
P-Channel MOSFET
Ordering and Marking Information
SM2691PS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
C : SOT-23-6
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM2691PS C : D91XX
XX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - January, 2016
1
www.sinopowersemi.com



Sinopower SM2691PSC
SM2691PSC
®
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Par am et er
Rating
Unit
Common Ratings
VD S S
VGSS
TJ
TSTG
IS
ID c
IDM a
PD
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
RqJA c Thermal Resistance-Junction to Ambient
TA=25°C
TA=25°C
TA=70°C
TA=25°C
TA=25°C
TA=70°C
t £ 10s
Steady State
-150
±25
150
-55 to 150
-1
-1.1
-0.9
-4
2.08
1.33
60
100
V
°C
A
A
A
W
°C/W
°C/W
IAS b Avalanche Current, Single pulse
L=0.5mH
-7 A
EAS b Avalanche Energy, Single pulse
L=0.5mH
12.3 mJ
Note aPulse width limited by maximum junction temperature.
Note bUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note cSurface Mounted on 1in2 pad area, t £ 10s.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - January, 2016
2
www.sinopowersemi.com



Sinopower SM2691PSC
SM2691PSC
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) d Drain-Source On-state Resistance
Diode Characteristics
VSD d Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics e
VGS=0V, IDS=-250mA
VDS=-120V, VGS=0V
TJ=85°C
VDS=VGS, IDS=-250mA
VGS=±25V, VDS=0V
VGS=-10V, IDS=-1.4A
ISD=-1A, VGS=0V
ISD=-1.4A,
dlSD/dt=100A/ms
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
VGS=0V,VDS =0V,f=1MHz
VGS=0V,
VDS=-30V,
Frequency=1.0MHz
VDD=-30V, RL=30W,
IDS=-1A, VGEN=-10V,
RG=6W
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-75V, VGS=-10V,
IDS=-1.4A
Note dPulse test ; pulse width£300ms, duty cycle£2%.
Note eGuaranteed by design, not subject to production testing.
Min.
-150
-
-
-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
- -V
- -1
- -30 mA
-3 -4 V
- ±10 mA
600 750 mW
-0.8 -1.2 V
33 - ns
53 - nC
8.5 - W
475 620
36 - pF
20 -
10 18
8.5 16
ns
22 40
12 20
11 16
2.6 - nC
3.2 -
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - January, 2016
3
www.sinopowersemi.com







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