BFG505

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D071 BFG505; BFG505/X NPN 9 GHz wideband transistors Product specification Supersedes data of September 1995 1998 Oct 02 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV). PINNING DESCRIPTION PIN BFG505 1 2 3 4 collector base emitter emitter BFG505/X collector emitter base emitter handbook, 2 columns 4 3 DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. 1 2 MSB014 MARKING TYPE NUMBER BFG505 BFG505/X QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE Cre fT GUM PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain Ts ≤ 130 °C VCE = 6 V; IC = 5 mA VCB = 6 V; IC = ic = 0; f = 1 MHz VCE = 6 V; IC = 5 mA; f = 1 GHz VCE = 6 V; IC = 5 mA; Tamb = 25 °C; f = 900 MHz VCE = 6 V; IC = 5 mA; Tamb = 25 °C; f = 2 GHz S212 F insertion power gain noise figure VCE = 6 V; Ic = 5 mA; Tamb = 25 °C; f = 900 MHz Γs = Γopt; VCE = 6 V; Ic = 1.25 mA; Tamb = 25 °C; f = 900 MHz Γs = Γopt; VCE = 6 V; Ic = 5 mA; Tam...