P-Channel MOSFET. SM2013PSKP Datasheet

SM2013PSKP MOSFET. Datasheet pdf. Equivalent

SM2013PSKP Datasheet
Recommendation SM2013PSKP Datasheet
Part SM2013PSKP
Description P-Channel MOSFET
Feature SM2013PSKP; SM2013PSKP ® P-Channel Enhancement Mode MOSFET Features · -20V/-100Aa, RDS(ON) = 3.0mW(max.) @ VGS.
Manufacture Sinopower
Datasheet
Download SM2013PSKP Datasheet




Sinopower SM2013PSKP
SM2013PSKP
®
P-Channel Enhancement Mode MOSFET
Features
· -20V/-100Aa,
RDS(ON) = 3.0mW(max.) @ VGS =-10V
RDS(ON) = 3.9mW(max.) @ VGS =-4.5V
RDS(ON) = 5.7mW(max.) @ VGS =-2.5V
· 100% UIS + Rg Tested
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DDDD
S S SG
DFN5x6A-8_EP
Pin 1
( 5,6,7,8 )
D D DD
Applications
· Portable Equipment applications.
· Notebook PC applications.
· Lithium Ion Battery applications.
(4)
G
SSS
(1, 2, 3)
P-Channel MOSFET
Ordering and Marking Information
SM2013PS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
KP : DFN5x6A-8_EP
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM2013PS KP :
2013PS
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2015
1
www.sinopowersemi.com



Sinopower SM2013PSKP
SM2013PSKP
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Par am et er
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
-20
±12 V
TJ
TST G
IS
ID
IDM b
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Continuous Drain Current
Pulsed Drain Current
TC=25°C
TC=25°C
TC=100°C
TC=25°C
150
-55 to 150
-100a
-100a
-83
-400
°C
A
PD Maximum Power Dissipation
TC=25°C
TC=100°C
78
W
31
RqJC Thermal Resistance-Junction to Case
Steady State
1.6 °C/W
ID Continuous Drain Current
TA=25°C
TA=70°C
-21
A
-17
PD Maximum Power Dissipation
TA=25°C
TA=70°C
2.08
W
1.33
RqJA c Thermal Resistance-Junction to Ambient
Steady State
60 °C/W
IAS d Avalanche Current, Single pulse
L=0.5mH
-23 A
EAS d Avalanche Energy, Single pulse
L=0.5mH
132 mJ
Note aPackage is limited to 100A.
Note bPulse width limited by max. junction temperature.
Note cSurface Mounted on 1in2 pad area.
Note dUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2015
2
www.sinopowersemi.com



Sinopower SM2013PSKP
SM2013PSKP
®
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) e Drain-Source On-state Resistance
Diode Characteristics
VSD e Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics f
VGS=0V, IDS= -250mA
VDS=-16V, VGS=0V
TJ=85°C
VDS=VGS, IDS= -250mA
VGS=±12V, VDS=0V
VGS=-10V, IDS=-20A
VGS=-4.5V, IDS=-20A
VGS=-2.5V, IDS=-20A
-20
-
-
-0.5
-
-
-
-
ISD=-1A VGS=0V
ISD=-20A, dlSD/dt=100A/ms
-
-
-
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics f
VGS=0V,VDS=0V,f=1MHz
VGS=0V,
VDS=-10V,
Frequency=1.0MHz
VDD=-10V, RL=10W,
IDS=-1A, VGEN=-10V,
RG=6W
-
-
-
-
-
-
-
-
Qg Total Gate Charge
VDS=-10V, VGS=-4.5V,
IDS=-20A
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-10V, VGS=-10V,
IDS=-20A
Note ePulse test ; pulse width£300ms, duty cycle£2%.
Note fGuaranteed by design, not subject to production testing.
-
-
-
-
Typ.
-
-
-
-0.7
-
2.5
3.1
4.2
-0.7
54
50
2.0
6865
1355
1235
18
17
258
92
70
153
8
28
Max.
-
1
30
-0.9
±100
3.0
3.9
5.7
-0.9
-
-
-
8925
-
-
33
31
465
166
-
215
-
-
Unit
V
mA
V
nA
mW
mW
mW
V
ns
nC
W
pF
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2015
3
www.sinopowersemi.com







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