P-Channel MOSFET. SM3391BSQA Datasheet

SM3391BSQA MOSFET. Datasheet pdf. Equivalent

SM3391BSQA Datasheet
Recommendation SM3391BSQA Datasheet
Part SM3391BSQA
Description Dual P-Channel MOSFET
Feature SM3391BSQA; SM3391BSQA Dual P-Channel Enhancement Mode MOSFET Features • -20V/-22A RDS(ON)=19mΩ(max.)@VGS=-4.5.
Manufacture Sinopower
Datasheet
Download SM3391BSQA Datasheet




Sinopower SM3391BSQA
SM3391BSQA
Dual P-Channel Enhancement Mode MOSFET
Features
• -20V/-22A
RDS(ON)=19mΩ(max.)@VGS=-4.5V
RDS(ON)=27mΩ(max.)@VGS=-2.5V
RDS(ON)=42mΩ(max.)@VGS=-1.8V
• 100% UIS + Rg Tested
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
D1D1D2D2
S1G1S2G2
DFN3x3B-8_EP2
Pin 1
(8) (7)
D1 D1
(6) (5)
D2 D2
Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
(2) (4)
G1 G2
S1 S2
(1) (3)
P-Channel MOSFET
Ordering and Marking Information
SM3391BS
SM3391BS QA :
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
QA : DFN3x3B-8_EP2
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
S33M91B
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are
fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL
classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl
does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest
version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - April, 2018
1
www.sinopowersemi.com



Sinopower SM3391BSQA
SM3391BSQA
Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
-20
V
±12
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
150
-55 to 150
°C
IS Diode Continuous Forward Current
TC=25°C
-8 * A
ID Continuous Drain Current
IDM a Pulsed Drain Current
TC=25°C
TC=100°C
TC=25°C
-22 *
-14 *
-32
A
PD Maximum Power Dissipation
TC=25°C
TC=100°C
14.7
W
5.9
RqJC Thermal Resistance-Junction to Case
8.5 °C/W
ID Continuous Drain Current
TA=25°C
TA=70°C
-6.4
A
-5.1
PD Maximum Power Dissipation
TA=25°C
TA=70°C
1.2
W
0.76
Rc
qJA
Thermal Resistance-Junction to Ambient
Steady state
105 °C/W
IAS b Avalanche Current, Single pulse
L=0.5mH
-9 A
EAS b Avalanche Energy, Single pulse
L=0.5mH
20 mJ
Note *Calculated continuous current based on maximum allowable junction temperature. Bonding wire limitation
current is 8A.
Note aPulse width limited by max. junction temperature.
Note bUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note cSurface Mounted on 1in2 pad area.
.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - April, 2018
2
www.sinopowersemi.com



Sinopower SM3391BSQA
SM3391BSQA
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS=0V, IDS=-250mA
IDSS Zero Gate Voltage Drain Current
VDS=-16V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=-250mA
IGSS Gate Leakage Current
Rd
DS(ON)
Drain-Source On-state Resistance
Diode Characteristics
VGS=±12V, VDS=0V
VGS=-4.5V, IDS=-10A
VGS=-2.5V, IDS=-4.5A
VGS=-1.8V, IDS=-2.5A
VSD d Diode Forward Voltage
ISD=-1A, VGS=0V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics e
ISD=-10A, dlSD/dt=100A/ms
RG Gate Resistance
VGS=0V,VDS=0V,f=1MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=-10V,
Frequency=1.0MHz
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
VDD=-10V, RL=10W,
IDS=-1A, VGEN=-10V,
RG=1W
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-10V, VGS=-4.5V,
IDS=-10A
Note dPulse test ; pulse width300ms, duty cycle2%.
Note eGuaranteed by design, not subject to production testing.
Min.
-20
-
-
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
15
20
28
-0.7
30
12
8
1620
320
290
9
14
27
120
18
2.7
6
Max.
-
-1
-30
-1.0
±10
19
27
42
-1
-
-
-
2100
-
-
16
25
49
216
25
-
-
Unit
V
mA
V
mA
mW
mW
mW
V
ns
nC
W
pF
ns
nC
Copyright © Sinopower Semiconductor, Inc.
Rev. A.2 - April, 2018
3
www.sinopowersemi.com







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