P-Channel MOSFET. SM3413PSQG Datasheet

SM3413PSQG MOSFET. Datasheet pdf. Equivalent

SM3413PSQG Datasheet
Recommendation SM3413PSQG Datasheet
Part SM3413PSQG
Description P-Channel MOSFET
Feature SM3413PSQG; SM3413PSQG ® P-Channel Enhancement Mode MOSFET Features • -30V/-62A, RDS(ON) = 7.5mΩ(max.) @ VGS.
Manufacture Sinopower
Datasheet
Download SM3413PSQG Datasheet




Sinopower SM3413PSQG
SM3413PSQG
®
P-Channel Enhancement Mode MOSFET
Features
-30V/-62A,
RDS(ON) = 7.5m(max.) @ VGS =-10V
RDS(ON) = 13m(max.) @ VGS =-4.5V
HBM ESD protection level pass 8KV
100% UIS + R Tested
g
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Note : The diode connected between the gate and
source serves only as protection against ESD. No
gate overvoltage rating is implied.
Applications
Pin Description
DDDD
S S SG
Pin 1
DFN3.3x3.3C-8_EP
( 5,6,7,8 )
D D DD
(4)
G
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
SSS
(1, 2, 3)
P-Channel MOSFET
SM3413PS
SM3413PS QG :
Assembly Material
Handling Code
Temperature Range
Package Code
SM
3413P
XXXXX
Package Code
QG : DFN3.3x3.3C-8_EP
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.3 - July, 2015
1
www.sinopowersemi.com



Sinopower SM3413PSQG
SM3413PSQG
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
-30
±25 V
TJ
TST G
IS
ID
IDM b
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Continuous Drain Current
Pulsed Drain Current
TC=25°C
TC=25°C
TC=100°C
TC=25°C
150
-55 to 150
-31
-62 a
-39 a
-248 a
°C
A
PD Maximum Power Dissipation
TC=25°C
TC=100°C
46
W
18
RθJC Thermal Resistance-Junction to Case
Steady State
2.7 °C/W
ID Continuous Drain Current
PD c Maximum Power Dissipation
TA=25°C
TA=70°C
TA=25°C
TA=70°C
-16
A
-12
3
W
2
RθJA d Thermal Resistance-Junction to Ambient
t 10s
Steady State
40
°C/W
80
IAS e Avalanche Current, Single pulse
L=0.5mH
-24 A
EAS e Avalanche Energy, Single pulse
L=0.5mH
144 mJ
Note aPackage limited.
Note bPulse width limited by max. junction temperature.
Note ct 10sec.
Note dRθJA steady state t=999s. RθJA is measured with the device mounted on 1in2, FR-4 board with 2oz. Copper.
Note eUIS tested and pulse width are limited by maximum junction temperature 150oC
(initial temperature TJ = 25oC).
Copyright © Sinopower Semiconductor, Inc.
Rev. A.3 - July, 2015
2
www.sinopowersemi.com



Sinopower SM3413PSQG
SM3413PSQG
®
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS
IDSS
VGS(th)
IGSS
RDS(ON) f
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
VGS=0V, IDS=-250µA
VDS=-24V, VGS=0V
TJ =85°C
VDS=VGS, IDS=-250µA
VGS=±20V, VDS=0V
VGS=-10V, IDS=-20A
VGS=-4.5V, IDS=-10A
-30
-
-
-1.3
-
-
-
Diode Characteristics
VSD f
trr g
Diode Forward Voltage
Reverse Recovery Time
Qrr g Reverse Recovery Charge
Dynamic Characteristics g
ISD=-1A, VGS=0V
ISD=-20A, dlSD/dt=100A/µs
-
-
-
Rg Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics g
VGS=0V, VDS=0V,F=1MHz
VGS=0V,
VDS=-15V,
Fr equenc y=1.0MHz
VDD=-15V, RL=15,
IDS=-1A, VGEN=-10V,
RG=6
-
-
-
-
-
-
-
-
Qg Total Gate Charge
VDS=-15V, VGS=-4.5V,
IDS=-20A
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-15V, VGS=-10V,
IDS=-20A
Note fPulse test ; pulse width300µs, duty cycle2%.
Note gGuaranteed by design, not subject to production testing.
-
-
-
Typ.
-
-
-
-1.8
-
6
9
-0.7
32
17
3
2893
629
513
15
13
58
23
32
62
7.2
19
Max.
-
-1
-30
-2.3
±10
7.5
13
-1
-
-
6
3760
-
-
27
23
104
41
45
-
-
-
Unit
V
µA
V
µA
m
V
ns
nC
pF
ns
nC
Copyright © Sinopower Semiconductor, Inc.
Rev. A.3 - July, 2015
3
www.sinopowersemi.com







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