NPN TRANSISTOR. KTC4079 Datasheet

KTC4079 TRANSISTOR. Datasheet pdf. Equivalent

KTC4079 Datasheet
Recommendation KTC4079 Datasheet
Part KTC4079
Description EPITAXIAL PLANAR NPN TRANSISTOR
Feature KTC4079; SEMICONDUCTOR TECHNICAL DATA HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURE.
Manufacture KEC
Datasheet
Download KTC4079 Datasheet




KEC KTC4079
SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY APPLICATION.
HF, VHF BAND AMPLIFIER APPLICATION.
FEATURE
High Power Gain : Gpe=29dB(Typ.) (f=10.7MHz)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Storage Temperature Range
Tstg
RATING
35
30
4
50
-50
100
150
-55 150
UNIT
V
V
V
mA
mA
mW
KTC4079
EPITAXIAL PLANAR NPN TRANSISTOR
E
MB
M
DIM MILLIMETERS
2
DA
B
2.00+_ 0.20
1.25 +_ 0.15
13
C 0.90 +_ 0.10
D 0.3+0.10/-0.05
E 2.10 +_ 0.20
G 0.65
H 0.15+0.1/-0.06
NK
J 1.30
K 0.00-0.10
L 0.70
H M 0.42+_ 0.10
N 0.10 MIN
N
1. EMITTER
2. BASE
3. COLLECTOR
USM
Marking
hFE Rank
Type Name
R
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Collector-Base Time Constant
Power Gain
ICBO
IEBO
hFE(Note)
VCE(sat)
VBE(sat)
fT
Cob
CC rbb'
Gpe
VCB=35V, IE=0
VEB=4V, IC=0
VCE=12V, IC=2mA
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCE=10V, IC=1mA
VCB=10V, IE=0, f=1MHz
VCE=10V, IE=-1mA, f=30MHz
VCC=6V, IE=-1mA, f=10.7MHz
Note : hFE Classification R(1):40 80, O(2):70 140, Y(4):120 240
MIN.
-
-
40
-
-
100
1.4
10
27
TYP.
-
-
-
-
-
-
2.0
-
29
MAX.
0.1
1.0
240
0.4
1.0
400
3.2
50
33
UNIT
A
A
V
V
MHz
pF
pS
dB
2008. 8. 29
Revision No : 4
1/4



KEC KTC4079
KTC4079
y PARAMETERS (Typ.)
(1) (COMMON EMITTER f=455kHz, Ta=25 )
CHARACTERISTIC
Collector-Emitter Voltage
Emitter Current
Input Conductance
Input Capacitance
Output Conductance
Output Capacitance
Forward Transfer Admittance
Phase Angle of Forward Transfer Admittance
Reverse Transfer Admittance
Phase Angle of Reverse Transfer Admittance
SYMBOL
VCE
IE
gie
Cie
goe
Coe
|yfe|
fe
|yre|
re
KTC4079-R
6
-1
0.58
53
1.9
2.6
38
-0.79
5.7
-90
KTC4079-O
6
-1
0.41
46
2.7
2.8
38
-0.83
5.7
-90
KTC4079-Y
6
-1
0.26
38
4.8
3.6
38
-0.92
6.2
-90
UNIT
V
mA
mS
pF
S
pF
mS
S
(2) (COMMON EMITTER f=10.7MHz, Ta=25 )
CHARACTERISTIC
Collector-Emitter Voltage
Emitter Current
Input Conductance
Input Capacitance
Output Conductance
Output Capacitance
Forward Transfer Admittance
Phase Angle of Forward Transfer Admittance
Reverse Transfer Admittance
Phase Angle of Reverse Transfer Admittance
SYMBOL
VCE
IE
gie
Cie
goe
Coe
|yfe|
fe
|yre|
re
KTC4079-R
6
-1
1.04
49
10
2.7
37
-9.6
120
-90
KTC4079-O
6
-1
0.85
43
15
2.9
37
-10.4
120
-90
KTC4079-Y
6
-1
0.65
36
28
3.6
37
-11.5
140
-90
UNIT
V
mA
mS
pF
S
pF
mS
S
2008. 8. 29
Revision No : 4
2/4



KEC KTC4079
KTC4079
y re - VCE
500
COMMON EMITTER
IE =-1mA
300 f=10.7MHz
Θre =-90
Ta=25 C
Y
R, O
100
50
1
35
10
30
COLLECTOR-EMITTER VOLTAGE VCE (V)
-1k 1k
-500 500
-300 300
yre , Θ re - I E
COMMON EMITTER
VCE =6V
f=10.7MHz
Ta=25 C
-100
-50
yre
100 Θre
50
Y
R,O
R, O
Y
-20 20
-0.1 -0.3 -1
-3 -10
EMITTER CURRENT IE (mA)
y re - VCE
30
COMMON EMITTER
IE =-1mA
f=455MHz
Θre =-90
Ta=25 C
10
5Y
R, O
2
1
35
10
30
COLLECTOR-EMITTER VOLTAGE VCE (V)
yfe , Θ fe - VCE
-3 300
COMMON EMITTER
I E =-1mA
f=455kHz
-1 100 Θ fe Y
Ta=25 C
OR
50 y fe R, O, Y
-0.3 30
-0.1 10
1
35
10
30
COLLECTOR-EMITTER VOLTAGE VCE (V)
20
10
5
3
1
-0.1
y re - I E
Y
R, O
COMMON EMITTER
VCE =6V
f=455MHz
Θre =-90
Ta=25 C
-0.3 -1
-3 -5
EMITTER CURRENT IE (mA)
2008. 8. 29
Revision No : 4
yfe , Θ fe - I E
-10 100
COMMON EMITTER
VCE =6V
-5 50 f=455kHz
Ta=25 C
-3 30
R, O, Y
Θ fe
-1 10
y fe
Y
O
R
-0.5 5
-0.1 -0.3 -1
-3 -5
EMITTER CURRENT IE (mA)
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