NPN TRANSISTOR. KTC5197 Datasheet

KTC5197 TRANSISTOR. Datasheet pdf. Equivalent

KTC5197 Datasheet
Recommendation KTC5197 Datasheet
Part KTC5197
Description TRIPLE DIFFUSED NPN TRANSISTOR
Feature KTC5197; SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES ᴌRecommended for 55W Audio F.
Manufacture KEC
Datasheet
Download KTC5197 Datasheet




KEC KTC5197
SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Recommended for 55W Audio Frequency
Amplifier Output Stage.
Complementary to KTA1940.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25)
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
RATING
120
120
5
10
0.8
80
150
-55150
UNIT
V
V
V
A
A
W
KTC5197
TRIPLE DIFFUSED NPN TRANSISTOR
AQ
B
K
D
d
PP
T
1 23
1. BASE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A 15.9 MAX
B 4.8 MAX
C 20.0+_ 0.3
D 2.0+_ 0.3
d 1.0+0.3/-0.25
E 2.0
F 1.0
G 3.3 MAX
H 9.0
I 4.5
MJ
2.0
K 1.8 MAX
L 20.5+_ 0.5
M 2.8
P 5.45+_ 0.2
Q Φ3.2+_ 0.2
T 0.6+0.3/-0.1
TO-3P(N)
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : hFE(1) Classification R:55~110,
ICBO
IEBO
V(BR)CEO
hFE(1) (Note)
hFE(2)
VCE(sat)
VBE
fT
Cob
O:80~160.
TEST CONDITION
VCB=120V, IE=0
VEB=5V, IC=0
IC=50mA, IB=0
VCE=5V, IC=1A
VCE=5V, IC=4A
IC=6A, IB=0.6A
VCE=5V, IC=4A
VCE=5V, IC=1A
VCB=10V, IE=0, f=1MHz
MIN.
-
-
120
55
35
-
-
-
-
TYP.
-
-
-
-
75
0.35
0.95
30
120
MAX.
5.0
5.0
-
160
-
2.0
1.5
-
-
UNIT
A
A
V
V
V
MHz
pF
1998. 10. 21
Revision No : 0
1/2



KEC KTC5197
KTC5197
I C - VCE
10
300
250
200
150
COMMON EMITTER
Tc=25 C
8 100
6
50
4 40
30
2 20
I B =10mA
0
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
I C - VBE
10
8
Tc=100 C
6 25 C
-25 C
4
2
COMMON EMITTER
VCE =5V
0
0
0.4 0.8
1.2 1.6 2.0
BASE-EMITTER VOLTAGE VBE (V)
VCE(sat) - I C
1 COMMON EMITTER
I C/I B=10
Tc=100 C
0.1
Tc=-25 C
0.01
0.01
Tc=20 C
0.1 1 10
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
30
I C MAX(PULSED) *
10
3
I C MAX(CONTINUOUS)
DCTcO=P2E5R5C0A0TmIOS N *
t=1mS *
10mS *
100mS *
1
0.3
*
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WIHT INCREASE
IN TEMPERATURE.
0.1
1 3 10 30 100 300
COLLECTOR-EMITTER VOLTAGE VCE (V)
1998. 10. 21
Revision No : 0
h FE - I C
1000
Tc=100 C
100
Tc=25 C
Tc=-25 C
10
COMMON EMITTER
1 VCE =5V
0.01 0.1
1
10
COLLECTOR CURRENT I C (A)
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