KTC601E

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES A super-minimold package houses 2 transistor. Excellent temperature response between these 2 transistor. High pairing property in hFE. The follwing characteristics are common for Q1, Q2. Suffix U : Qualified to AEC-Q101. ex) KTC601E-Y-RTK/HU A A1 CC KTC601E EPITAXIAL PLANAR NPN TRANSISTOR B B1 1 5 DIM MILLIMETERS A 1.6 +_ 0.05 A1 1.0+_ 0.05 2 B 1.6+_ 0.05 B1 1.2+_ 0.05 3 4 C 0.50 D 0.2+_ 0.05 H 0.5+_ 0.05 P P J 0.12+_ 0.05 P5 JD H MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Rating SYMBOL VCBO VCEO VEBO IC IB PC * Tj Tstg RATING 60 50 5 150 30 200 150 -55 150 UNIT V V V mA mA mW 1. Q1 BASE 2. Q1, Q 2 EMITTER 3. Q 2 BASE 4. Q 2 COLLECTOR 5. Q1 COLLECTOR TESV EQUIVALENT CIRCUIT (TOP VIEW) 54 Q1 Q2 12 3 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance ICBO IEBO hFE (Note) VCE(sat) fT Cob VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2 IC=100 , IB=10 VCE=10V, IC=1 VCB=10V, IE=0, f=1 Noise Figure NF VCE=6V, IC=0.1 , f=1 , Rg=10 Note : hFE Classification Y(4):120 240, GR(6):200 400 Marking MIN. - 120 80 - TYP. 0.1 2 1.0 MAX. UNI...