NPN TRANSISTOR. KTC811E Datasheet

KTC811E TRANSISTOR. Datasheet pdf. Equivalent

KTC811E Datasheet
Recommendation KTC811E Datasheet
Part KTC811E
Description EPITAXIAL PLANAR NPN TRANSISTOR
Feature KTC811E; SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ᴌA super-m.
Manufacture KEC
Datasheet
Download KTC811E Datasheet




KEC KTC811E
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
A super-minimold package houses 2 transistor.
Excellent temperature response between these 2 transistor.
High pairing property in hFE.
The follwing characteristics are common for Q1, Q2.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IB
PC *
Tj
Storage Temperature Range
* Total Rating
Tstg
RATING
60
50
5
150
30
200
150
-55150
UNIT
V
V
V
mA
mA
mW
KTC811E
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1 6 DIM MILLIMETERS
A 1.6+_ 0.05
2
5
A1 1.0 +_ 0.05
B 1.6+_ 0.05
B1 1.2 +_ 0.05
3 4 C 0.50
D 0.2+_ 0.05
H 0.5+_ 0.05
P
J 0.12+_ 0.05
P P5
1. Q1 EMITTER
2. Q2 EMITTER
3. Q2 BASE
4. Q2 COLLECTOR
5. Q1 BASE
6. Q1 COLLECTOR
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
65 4
Q1 Q2
12 3
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP. MAX. UNIT.
Collector Cut-off Current
ICBO
VCB=60V, IE=0
Emitter Cut-off Current
IEBO VEB=5V, IC=0
DC Current Gain
hFE (Note) VCE=6V, IC=2
Collector-Emitter Saturation Voltage
VCE(sat)
IC=100, IB=10
Transition Frequency
fT VCE=10V, IC=1
Collector Output Capacitance
Cob VCB=10V, IE=0, f=1
Noise Figure
NF VCE=6V, IC=0.1, f=1, Rg=10
Note : hFE Classification Y(4):120240, GR(6):200400
Marking
-
-
120
-
80
-
-
65
- 0.1
- 0.1
- 400
0.1 0.3
--
2 3.5
1.0 10
Type Name
4
V
V hFE Rank
2001. 8. 6
Revision No : 0
123
1/3
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KEC KTC811E
KTC811E
I C - VCE
240
6.0mA 5.0mA
COMMON EMITTER
Ta=25 C
200 3.0mA 2.0mA
160
1.0mA
120
80 0.5mA
40 I B=0.2mA
0
0
012345 67
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - IC
1k
COMMON EMITTER
500
300
Ta=100 C
Ta=25 C
100 Ta=-25 C
VCE =6V
50
30
VCE =1V
10
0.1
0.3 1
3 10 30 100
COLLECTOR CURRENT IC (mA)
300
VCE(sat) - I C
1
COMMON EMITTER
0.5 IC/I B=10
0.3
0.1 Ta=100 C
0.05
0.03
Ta=25 C
Ta=-25 C
0.01
0.1
0.3 1
3 10 30 100
COLLECTOR CURRENT IC (mA)
300
fT - IC
3k COMMON EMITTER
VCE =10V
1k Ta=25 C
500
300
100
50
30
10
0.1
0.3 1
3 10 30 100
COLLECTOR CURRENT IC (mA)
300
2001. 8. 6
Revision No : 0
VBE(sat) - I C
10
COMMON EMITTER
5 IC/I B=10
Ta=25 C
3
1
0.5
0.3
0.1
0.1
0.3 1
3 10 30 100
COLLECTOR CURRENT IC (mA)
300
I B - VBE
3k
COMMON
1k EMITTER
VCE =6V
300
100
30
10
3
1
0.3
0
0.2 0.4 0.6 0.8 1.0
BASE-EMITTER VOLTAGE VBE (V)
1.2
2/3



KEC KTC811E
KTC811E
250
200
150
100
50
0
0
Pc - Ta
25 50 75 100 125
AMBIENT TEMPERATURE Ta ( C)
150
2001. 8. 6
Revision No : 0
3/3







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