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BFG540 Dataheets PDF



Part Number BFG540
Manufacturers NXP
Logo NXP
Description NPN 9GHz wideband transistor
Datasheet BFG540 DatasheetBFG540 Datasheet (PDF)

BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Rev. 05 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.phil.

  BFG540   BFG540


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BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Rev. 05 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) [email protected] use [email protected] (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. - If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via [email protected]). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors NPN 9 GHz wideband transistor FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optical systems. The transistors are mounted in plastic SOT143B and SOT143R packages. PINNING PIN DESCRIPTION BFG540 (Fig.1) Code: %MG 1 collector 2 base 3 emitter 4 emitter BFG540/X (Fig.1) Code: %MM 1 collector 2 emitter 3 base 4 emitter BFG540/XR (Fig.2) Code: %MR 1 collector 2 emitter 3 base 4 emitter Product specification BFG540; BFG540/X; BFG540/XR handbook, 2 c4olumns 3 12 Top view MSB014 Fig.1 SOT143B. handbook, 2 co3lumns 4 21 Top view MSB035 Fig.2 SOT143R. Rev. 05 - 21 November 2007 2 of 14 NXP Semiconductors NPN 9 GHz wideband transistor Product specification BFG540; BFG540/X; BFG540/XR QUICK REFERENCE DATA SYMBOL PARAMETER VCBO VCES IC Ptot hFE Cre fT collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain feedback capacitance transition frequency GUM maximum unilateral power gain s21 2 F insertion power gain noise figure CONDITIONS open emitter RBE = 0 Ts ≤ 60 °C; note 1 IC = 40 mA; VCE = 8 V; Tj = 25 °C IC = 0; VCE = 8 V; f = 1 MHz IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C MIN. − − − − 100 − − − − 15 − − − TYP. − − − − 120 0.5 9 18 11 16 1.3 1.9 2.1 MAX. UNIT 20 V 15 V 120 mA 400 mW 250 − pF − GHz − dB − dB − dB 1.8 dB 2.4 dB − dB LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER VCBO VCES VEBO IC Ptot Tstg Tj collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature CONDITIONS open emitter RBE = 0 open collector Ts ≤ 60 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. MIN. − − − − − −65 − MAX. UNIT 20 V 15 V 2.5 V 120 mA 400 mW +150 °C 150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-s thermal resistance from junction to soldering point Ts ≤ 60 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. VALUE 290 UNIT K/W Rev. 05 - 21 November 2007 3 of 14 NXP Semiconductors NPN 9 GHz wideband transistor Product specification BFG540; BFG540/X; BFG540/XR CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector cut-off current hFE DC current gain Ce emitter capacitance Cc collector capacitance Cre feedback capacitance fT transition frequency GUM maximum unilateral power gain (note 1) s21 2 F insertion power gain noise figure PL1 output power at 1 dB gain compression ITO third order intercept point VO output voltage d2 second order intermodulation distortion CONDITIONS IE = 0; VCB = 8 V IC = 40 mA; VCE = 8 V IC = ic = 0; VEB = 0.5 V; f = 1 MHz IE = ie = 0; VCB = 8 V; f = 1 MHz IC = 0; VCB = 8 V; f = 1 MHz IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 40 mA;.


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