BFG540; BFG540/X; BFG540/XR
NPN 9 GHz wideband transistor
Rev. 05 — 21 November 2007
Product data sheet
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NXP Semiconductors
NXP Semiconductors
NPN 9 GHz wideband transistor
FEATURES
• High power gain • Low noise figure • High transition frequency • Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optical systems.
The transistors are mounted in plastic SOT143B and SOT143R packages.
PINNING
PIN DESCRIPTION BFG540 (Fig.1) Code: %MG 1 collector 2 base 3 emitter 4 emitter BFG540/X (Fig.1) Code: %MM 1 collector 2 emitter 3 base 4 emitter BFG540/XR (Fig.2) Code: %MR 1 collector 2 emitter 3 base 4 emitter
Product specification
BFG540; BFG540/X; BFG540/XR
handbook, 2 c4olumns
3
12
Top view
MSB014
Fig.1 SOT143B.
handbook, 2 co3lumns
4
21
Top view
MSB035
Fig.2 SOT143R.
Rev. 05 - 21 November 2007
2 of 14
NXP Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG540; BFG540/X; BFG540/XR
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO VCES IC Ptot hFE Cre fT
collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain feedback capacitance transition frequency
GUM
maximum unilateral power gain
s21 2 F
insertion power gain noise figure
CONDITIONS
open emitter
RBE = 0
Ts ≤ 60 °C; note 1 IC = 40 mA; VCE = 8 V; Tj = 25 °C IC = 0; VCE = 8 V; f = 1 MHz IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C
MIN. − − − − 100 − −
−
−
15
−
−
−
TYP. − − − − 120 0.5 9
18
11
16
1.3
1.9
2.1
MAX. UNIT 20 V 15 V 120 mA 400 mW 250 − pF − GHz
− dB
− dB
− dB
1.8 dB
2.4 dB
− dB
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
VCBO VCES VEBO IC Ptot Tstg Tj
collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature
CONDITIONS open emitter RBE = 0 open collector
Ts ≤ 60 °C; note 1
Note 1. Ts is the temperature at the soldering point of the collector pin.
MIN.
− − − − − −65 −
MAX. UNIT
20 V 15 V 2.5 V 120 mA 400 mW +150 °C 150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point Ts ≤ 60 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
VALUE 290
UNIT K/W
Rev. 05 - 21 November 2007
3 of 14
NXP Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG540; BFG540/X; BFG540/XR
CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE DC current gain
Ce emitter capacitance
Cc collector capacitance
Cre feedback capacitance
fT transition frequency
GUM
maximum unilateral power gain (note 1)
s21 2 F
insertion power gain noise figure
PL1 output power at 1 dB gain compression
ITO third order intercept point
VO output voltage d2 second order intermodulation
distortion
CONDITIONS
IE = 0; VCB = 8 V
IC = 40 mA; VCE = 8 V
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IE = ie = 0; VCB = 8 V; f = 1 MHz
IC = 0; VCB = 8 V; f = 1 MHz
IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C Γs = Γopt; IC = 40 mA;.