Silicon Microphone. NSM0411DT Datasheet

NSM0411DT Microphone. Datasheet pdf. Equivalent

NSM0411DT Datasheet
Recommendation NSM0411DT Datasheet
Part NSM0411DT
Description Top-Inlet Digital Silicon Microphone
Feature NSM0411DT; NSM0411DT V1.0 QS-EP00-080 NSM0411DT-Top-Inlet Digital Silicon Microphone Specification Rev. 1.0 © 2.
Manufacture NeoMEMS
Datasheet
Download NSM0411DT Datasheet




NeoMEMS NSM0411DT
NSM0411DT V1.0
QS-EP00-080
NSM0411DT-Top-Inlet Digital Silicon
Microphone Specification
Rev. 1.0
© 2013 Wuxi NeoMEMS Technologies, Inc.
Advanced datasheet subject to changes. The above information is the exclusive intellectual property of
Wuxi NeoMEMS Technologies, Inc. and shall not be disclosed, distributed or reproduced without
permission from Wuxi NeoMEMS Technologies, Inc.
1



NeoMEMS NSM0411DT
NSM0411DT V1.0
1. GENERAL DESCRIPTION
NSM0411DT is a Silicon Microphone with digital output and top inlet for sound
input. It consists of a MEMS sensor and an encoder IC. It converts sensor analog
output signal into 1-bit digital PDM data. The digital output format eliminates AC
coupling capacitor, reduces RF noise coupling and eases PCB layout requirement.
NSM0411DT is a cost-effective alternative to traditional electret condenser
microphone (ECM). Provided on tap-and-reel, it is ideally suited for high volume
applications. And it can be processed directly to customer’s PCB using standard
automatic pick-and-place equipment and surface mounted via standard solder reflow
equipment.
NSM0411DT can be used to implement the array microphones. Speech quality
can be significantly improved by combining two microphones and Fortemedia’s
SAMTM technology.
NSM0411DT can be used in (but not limited to) the following applications:
1. Portable communication device
2. Notebook and desktop
3. Headphone and headset accessories
2. ABSOLUTE MAXIMUM RATINGS
Supply voltage: VDD to GND…………-0.3V5V
L/R, CLOCK, DATA Voltage to GND…-0.3V~ (VDD+0.3V)
ESD Tolerance
The Lid Mode ……………………8kV
The I/O Pin Mode ………………….4kV
Parameter
Operating Temperature
Storage Temperature
TEMPERATURE CHARACTERISTICS
Conditions
Min Typ Max Unit
-40 +85
Solder on PC board
-40
+105
In Tape and Reel
-10 +50
© 2013 Wuxi NeoMEMS Technologies, Inc.
Advanced datasheet subject to changes. The above information is the exclusive intellectual property of
Wuxi NeoMEMS Technologies, Inc. and shall not be disclosed, distributed or reproduced without
permission from Wuxi NeoMEMS Technologies, Inc.
2



NeoMEMS NSM0411DT
NSM0411DT V1.0
3 .ACOUSTIC & ELECTRICAL SPECIFICATIONS
Unless otherwise specified, test conditions are:
Supply voltage VDD = 3.3V
Clock Frequency = 2.048MHz,Duty Cycle = 50%,No Load
Input sound pressure PIN = 94dB SPL@1kHZ
Test room temperature Ta = 25,Room Humidity = 50%
SNR & noise floor measurement is based on 100 – 8KHz pass band with A-Weighting
filter applied
PERFORMANCE
Parameter
Conditions
Min Typ Max Unit
Directivity
Omni-Directional
Sensitivity
@1KHz (0 dB = 1V/Pa)
-25 -22 -19 dBFS
Signal-to-Noise Ratio
Total Harmonic Distortion
(THD) @ 100dB SPL
Total Harmonic Distortion
(THD) @ 115dB SPL
Max Input Sound Pressure
@1KHz (0 dB = 1V/Pa)
@1KHz
@1KHz
@1KHz, THD < 10%
61 dB(A)
0.2 0.5 %
0.5 1
%
130 dB SPL
Power Supply Rejection (PSR) 217Hz,100m Vpp square wave
-70 -65 dBFS
Operating Frequency
Clock Duty Cycle
INPUT CHARACTERISTICS
1.024
40
2.048
50
3.072
60
MHz
%
Power supply Voltage
1.6
Sensitivity Loss Across Power
Supply Voltage
Total Operation Current
Standby Current
Change in sensitivity from
1.6V to 3.6V power supply
voltage
1.6V-3.6V power supply
voltage No load on DATA
1.6V-3.6V power supply
voltage, Clock off
No change
850
OUTPUT CHARACTERISTICS
3.6 V
dB
1000 uA
2 uA
LOAD Capacitance
100 pF
Short Circuit Output Current @1KHz (0 dB = 1 V/Pa)
1
10 mA
Data Format
1/2 Cycle 1-bit PDM
Lid to Ground Resistance
100 Ω
© 2013 Wuxi NeoMEMS Technologies, Inc.
Advanced datasheet subject to changes. The above information is the exclusive intellectual property of
Wuxi NeoMEMS Technologies, Inc. and shall not be disclosed, distributed or reproduced without
permission from Wuxi NeoMEMS Technologies, Inc.
3







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