BFG541

DISCRETE SEMICONDUCTORS DATA SHEET BFG541 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems. The transistors are mounted in a plastic SOT223 envelope. PINNING PIN 1 2 3 4 base emitter collector DESCRIPTION emitter page BFG541 4 1 Top view 2 3 MSB002 - 1 Fig.1 SOT223. September 1995 2 Philips Semiconductors Product specification NPN 9 GHz wideband transistor QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain up to Ts = 140 °C; note 1 IC = 40 mA; VCE = 8 V; Tj = 25 °C IC = 0; VCB = 8 V; f = 1 MHz IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C S212 F PL1 ITO insertion power gain noise figure output power at 1 dB g...