Schottky rectifiers. STPS4045C-Y Datasheet

STPS4045C-Y rectifiers. Datasheet pdf. Equivalent

STPS4045C-Y Datasheet
Recommendation STPS4045C-Y Datasheet
Part STPS4045C-Y
Description Automotive power Schottky rectifiers
Feature STPS4045C-Y; A1 K A2 A2 K A1 TO-247 STPS4045CWY Features  Very small conduction losses  Negligible switching lo.
Manufacture STMicroelectronics
Datasheet
Download STPS4045C-Y Datasheet




STMicroelectronics STPS4045C-Y
A1
K
A2
A2
K
A1
TO-247
STPS4045CWY
Features
Very small conduction losses
Negligible switching losses
Extremely fast switching
Low thermal resistance
Avalanche capability specified
AEC-Q101 qualified
STPS4045C-Y
Automotive power Schottky rectifiers
Datasheet - production data
Description
This dual center tap Schottky rectifier is suited for
switch mode power supply and high frequency
DC to DC converters.
Packaged in TO-247 this device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection for automotive
applications.
Table 1. Device summary
Symbol
Value
IF(AV)
VRRM
Tj (max)
VF (max)
2 x 20 A
45 V
175 °C
0.63 V
December 2013
This is information on a product in full production.
DocID17952 Rev 1
1/8
www.st.com



STMicroelectronics STPS4045C-Y
Characteristics
1 Characteristics
STPS4045C-Y
Table 2. Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
IF(AV) Average forward current
Tc = 150 °C, = 0.5
Tc = 145 °C, = 0.5
Per diode
Per device
IFSM
IRRM
Surge non repetitive forward current
Repetitive peak reverse current
tp = 10 ms sinusoidal
tp = 2 µs square F=1 kHz
IRSM Non repetitive peak reverse current
tp = 100 µs square
PARM Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
Tstg Storage temperature range
Tj Operating junction temperature(1)
dV/dt Critical rate of rise reverse voltage
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistances
45
30
20
40
220
1
3
6000
-65 to + 175
-40 to + 175
10000
V
A
A
A
A
A
W
°C
°C
V/µs
Symbol
Parameter
Value
Unit
Rth (j-c) Junction to case
Rth (c) Coupling
Per diode
Total
1.5
0.8 C/W
0.1
When the diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode2) x Rth(c)
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STMicroelectronics STPS4045C-Y
STPS4045C-Y
Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Tests conditions
Min. Typ.
IR (1) Reverse leakage current
VF (1) Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 20 A
IF = 40 A
-
-
-
-
-
-
1. Pulse test: tp = 380 µs, < 2%
To evaluate the conduction losses use the following equation:
P = 0.43x IF(AV) + 0.01x IF2(RMS)
-
11
-
0.56
-
0.7
Max.
200
40
0.76
0.63
0.94
0.83
Unit
µA
mA
V
Figure 1. Average forward power dissipation
versus average forward current (per diode)
18 PF(av)(W)
16
14
δ=0.1
12 δ=0.05
δ=0.2
δ=0.5
δ=1
10
8
6
4T
2
IF(av) (A)
δ=tp/T
tp
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26
Figure 2. Average forward current versus
ambient temperature (= 0.5 per diode)
24 IF(av)(A)
22
20
18
16
14
12
10
8
6T
4
2 δ=tp/T
0
0 25
tp
50
Rth(j-a)=Rth(j-c)
Tamb(°C)
75 100 125 150 175
Figure 3. Normalized avalanche power derating Figure 4. Normalized avalanche power derating
versus pulse duration
versus junction temperature
PARM(tp)
PARM(1 µs)
1
PARM(Tj)
PARM(25 °C)
1.2
1
0.1 0.8
0.6
0.01
0.4
0.001
tp(µs)
0.2
Tj(°C)
0
0.01
0.1
1
10
100
1000
25
50
75 100 125 150
DocID17952 Rev 1
3/8
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