BFG67W

DISCRETE SEMICONDUCTORS DATA SHEET BFG67W BFG67W/X; BFG67W/XR NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 August 1995 Philips Semiconductors Philips Semiconductors Product specification NPN 8 GHz wideband transistor FEATURES High power gain Low noise figure Gold metallization ensures excellent reliability. APPLICATIONS They are intended for wideband applications in the GHz range such as analog satellite television systems and portable RF communication equipment. DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343 and SOT343R packages. MARKING TYPE NUMBER BFG67W BFG67W/X BFG67W/XR PINNING PIN DESCRIPTION CODE V2 BFG67W BFG67W/X; BFG67W/XR fpage V6 V7 4 3 1 Top view 2 MBK523 BFG67W (see Fig.1) 1 2 3 4 collector base emitter emitter alfpage Fig.1 SOT343. BFG67W/X (see Fig.1) 1 2 3 4 collector emitter base emitter 2 Top view 1 MSB842 3 4 BFG67W/XR (see Fig.2) 1 2 3 4 collector emitter base emitter Fig.2 SOT343R. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM F PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain noise figure up to Ts = 85 °C IC = 15 mA; VCE = 5 V IC = 0; VCE = 8 V; f = 1 MHz IC = 15 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C Γs = Γopt; IC = 5 mA; VCE = 8 V; f = 2 GHz open emitter open base CONDITIONS MIN....