JFET AMPLIFIER. LSK489 Datasheet

LSK489 AMPLIFIER. Datasheet pdf. Equivalent

LSK489 Datasheet
Recommendation LSK489 Datasheet
Part LSK489
Description LOW NOISE LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER
Feature LSK489; Over Three Decades of Quality Through Innovation LSK489 LOW NOISE LOW CAPACITANCE MONOLITHIC DUAL N.
Manufacture Linear Integrated Systems
Datasheet
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Linear Integrated Systems LSK489
Over Three Decades of Quality Through Innovation
LSK489
LOW NOISE LOW CAPACITANCE
MONOLITHIC DUAL
N-CHANNEL JFET AMPLIFIER
FEATURES
ULTRA LOW NOISE
LOW INPUT CAPACITANCE
en = 1.8nV/Hz
Ciss = 4pF
Features
Reduced Noise due
to process improvement
Monolithic Design
High slew rate
Low offset/drift voltage
Low gate leakage lgss & lg
High CMRR 102 dB
Benefits
Tight differential voltage match vs.
current
Improved op amp speed settling time
accuracy
Minimum Input Error trimming error
voltage
Lower intermodulation distortion
Applications
Wide band differential Amps
High speed temperature
compensated single ended input
amplifier amps
High speed comparators
Impedance Converters
Description
The LSK 489 series of high performance monolithic dual JFETs features extremely low noise, tight offset voltage and low drift
over temperature specifications, and is targeted for use in a wide range or precision instrumentation applications. This series has
a wide selection of offset and drift specifications. The SST series SO-8 package provided ease of manufacturing and the
symmetrical pinout prevents improper orientation. The SO-8 package is available with tape and reel options for compatibility with
automatic assembly methods. (See packaging data)
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Junction Operating Temperature
Maximum Power Dissipation, TA = 25°C
Continuous Power Dissipation, per side 4
Power Dissipation, total 5
Maximum Currents
Gate Forward Current
Maximum Voltages
Gate to Source
Gate to Drain
-55 to +150°C
-55 to +150°C
300mW
500mW
IG(F) = 10mA
VGSO = 60V
VGDO = 60V
TO-71
TOP VIEW
SOIC-A
SOT-23
TOP VIEW
Linear Integrated Systems
* For equivalent single version, see LSK189
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201151 08/09/17 Rev#A31 ECN# LSK489



Linear Integrated Systems LSK489
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX UNITS
VGS1 VGS2 Differential Gate to Source Cutoff
Voltage
20 mV
IDSS1 Gate to Source Saturation Current Ratio 0.9
ID SS2
1.0
CMRR
COMMON MODE REJECTION RATIO
-20 log│∆VGS1-2/∆VDS
95 102
dB
CONDITIONS
VDS = 10V, ID = 1mA
VDS = 10V, VGS = 0V
VDS = 10V to 20V, ID = 200µA
SYMBOL
en
CHARACTERISTIC
Noise Voltage
en
CISS
CRSS
Noise Voltage
Common Source Input Capacitance
Common Source Reverse Transfer
Capacitance
MIN TYP MAX UNITS CONDITIONS
2.0
nV/Hz
VDS = 15V, ID = 2.0mA, f = 1kHz,
NBW = 1Hz
3.5
nV/Hz
VDS = 15V, ID = 2.0mA, f = 10Hz,
NBW = 1Hz
4 8 pF
VDS = 15V, ID = 500µA, f = 1MHz
3 pF
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX
BVGSS
Gate to Source Breakdown Voltage
-60
V(BR)G1 - G2 Gate to Gate Breakdown Voltage
±30 ±45
VGS(OFF) Gate to Source Pinch-off Voltage
-1.5
-3.5
VGS
IDSS2
Gate to Source Operating Voltage
Drain to Source Saturation Current
-0.5 -3.5
2.5 5 15
IG Gate Operating Current
-2 -25
-0.8 -10
IGSS Gate to Source Leakage Current
-100
Gfs Full Conductance Transconductance 1500
Gfs Transconductance
1000 1500
GOS Full Output Conductance
40
GOS Output Conductance
1.8 2.7
UNITS
V
V
V
V
mA
pA
nA
pA
µS
µS
µS
µS
NF Noise Figure
0.5 dB
CONDITIONS
VDS = 0, ID = -1nA
IG= ±1µA, ID=IS=0 A (Open Circuit)
VDS = 15V, ID = 1nA
VDS = 15V, ID = 500µA
VDG = 15V, VGS = 0
VDG = 15V, ID = 200µA
TA = 125°C
VDG = -15V, VDS = 0
VDG = 15V, VGS = 0, f = 1kHz
VDG = 15V, ID = 500µA
VDG = 15V, VGS = 0
VDG = 15V, ID = 200µA
VDS = 15V, VGS = 0, RG = 10MΩ,
f = 100Hz, NBW = 6Hz
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201151 08/09/17 Rev#A31 ECN# LSK489



Linear Integrated Systems LSK489
PACKAGE DIMENSIONS
TO-71
SIX LEAD
0.210
0.170
DIMENSIONS IN INCHES
SOIC-A
DIMENSIONS IN INCHES
0.95
1.90
SSOOTT--2233
SSIiXxLLEeAaDd
16
25
34
0.35
0.50
2.80
3.00
1.50
1.75
0.90 2.60
1.30 3.00
0.09
0.20
0.00
0.15
0.10
0.60
DIMENSDMIOIIMLNLESINMISENITOMENRISLSLINIMETERS
NOTES
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Pulse width ≤2ms.
3. All MIN/TYP/MAX Limits are absolute values. Negative signs indicate electrical polarity only.
4. Derate 2.4 mW/°C above 25°C.
5. Derate 4 mW/°C above 25°C.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201151 08/09/17 Rev#A31 ECN# LSK489







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