IRFB640

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate MOSFETS IRFB640 MOSFET( N-Channel ) TO-263-2L FEATURE z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement DESCRIPTION 1. GATE 2. DRAIN 3. SOURCE Third Generation HEXFETs from internation Rectifier provide the designer with the best combination of fast switching ,ruggedized device design,low on-resistance and cost effectiveness. The TO-220-3L package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220-3L contribute to its wide acceptance throughout the industry. MAXIMUM RATINGS(Ta=25℃ unless otherwise noted ) Symbol Parameter ID Continuous Drain Current, VGS @ 10 V PD Power Dissipation Linear Derating Factor VGS EAS RθJA TJ TSTG Gate-Souse Voltage Single Pulse Avalanche Energy (note 1) T...