N-Channel MOSFET. IRFB640 Datasheet

IRFB640 MOSFET. Datasheet pdf. Equivalent

IRFB640 Datasheet
Recommendation IRFB640 Datasheet
Part IRFB640
Description N-Channel MOSFET
Feature IRFB640; JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate MOSFETS IRFB640 MO.
Manufacture JCET
Datasheet
Download IRFB640 Datasheet




JCET IRFB640
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-263-2L Plastic-Encapsulate MOSFETS
IRFB640 MOSFET( N-Channel )
TO-263-2L
FEATURE
z Dynamic dv/dt Rating
z Repetitive Avalanche Rated
z Fast Switching
z Ease of Paralleling
z Simple Drive Requirement
DESCRIPTION
1. GATE
2. DRAIN
3. SOURCE
Third Generation HEXFETs from internation Rectifier provide the
designer with the best combination of fast switching ,ruggedized device
design,low on-resistance and cost effectiveness.
The TO-220-3L package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220-3L contribute to its wide
acceptance throughout the industry.
MAXIMUM RATINGS(Ta=25unless otherwise noted )
Symbol
Parameter
ID Continuous Drain Current, VGS @ 10 V
PD Power Dissipation
Linear Derating Factor
VGS
EAS
RθJA
TJ
TSTG
Gate-Souse Voltage
Single Pulse Avalanche Energy (note 1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
18
2
1.0
±20
580
62.5
150
-55~+150
Units
A
W
W/
V
mJ
/W
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JCET IRFB640
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Drain-source breakdown voltage
Gate-threshold voltage
Gate-body leakage
Zero gate voltage drain current
Drain-source on-resistance (note 2)
Forward transconductance (note 2)
Diode forward voltage (note 2)
Input capacitance (note 3)
Output capacitance (note 3)
Reverse transfer capacitance (note 3)
Turn-on time(note 2,3)
Rise time
Turn-off time (note 2,3)
Fall time (note 2,3)
Symbol
V(BR)DSS
V (GS)th
lGSS
IDSS
RDS(Rn)
gfs
VSD
Ciss
Coss
Crss
td(Rn)
tr
td(off)
tf
Test conditions
VGS=0V,ID=250µA
VDS=VGS, ID=250µA
VDS=0V, VGS=±20V
VDS=200V, VGS=0V
VGS=10V, ID=11A
VDS=50V, ID=11A
IS=18A, VGS=0V
VDS=25V, VGS=0V,f=1MHz
VDD=100V,RD=5.4,
ID=18A, RG=9.1
Notes:
1. VDD=50V,starting TJ=25L=2.7mH,RG=25IAS=18A.
2. Pulse test: Pulse width300µs, duty cycle2%.
3. These parameters have no way to verify.
Min Typ Max Unit
200
V
24
±100 nA
25 µA
0.18
6.7 S
2V
1300
430 pF
130
14
51
ns
45
36
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2
A,Nov,2014



JCET IRFB640
Typical Characteristics
Typical Characteristics
IRFB640
18
Pulsed
Output Characteristics
VGS= 8V10V
12
VGS=6V
VGS=5.5V
6
VGS=5V
VGS=4.5V
0
0 10 20 30
DRAIN TO SOURCE VOLTAGE VDS (V)
0.5
Ta=25
Pulsed
0.4
R
DS(ON)
——
I
D
0.3
0.2
VGS=10V
0.1
0.0
0.2
3
20
Pulsed
10
6 9 12
DRAIN CURRENT ID (A)
15
I
S
——
V
SD
18
1 Ta=100
Ta=25
0.1
0.01
0.0
0.4 0.8 1.2 1.6
SOURCE TO DRAIN VOLTAGE VSD (V)
2.0
2.0
VDS=30V
Pulsed
1.6
Transfer Characteristics
1.2
0.8
Ta=100
Ta=25
0.4
0.0
01234567
GATE TO SOURCE VOLTAGE VGS (V)
RDS(ON)——
V
GS
0.5
Pulsed
ID=11A
0.4
0.3
Ta=100
0.2
Ta=25
0.1
0.0
4 6 8 10
GATE TO SOURCE VOLTAGE VGS (V)
Threshold Voltage
5
4
ID=250uA
3
2
1
0
25 50 75 100 125
JUNCTION TEMPERATURE TJ ()
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