DISCRETE SEMICONDUCTORS
DATA SHEET
BFM505 Dual NPN wideband transistor
Product specification Supersedes data of 1995 Se...
DISCRETE SEMICONDUCTORS
DATA SHEET
BFM505 Dual
NPN wideband
transistor
Product specification Supersedes data of 1995 Sep 04 File under Discrete Semiconductors, SC14 1996 Oct 08
Philips Semiconductors
Product specification
Dual
NPN wideband
transistor
FEATURES Small size Temperature and hFE matched Low noise and high gain High gain at low current and low capacitance at low voltage Gold metallization ensures excellent reliability. APPLICATIONS Oscillator and buffer amplifiers Balanced amplifiers LNA/mixer.
b1 6
handbook, halfpage
BFM505
PINNING - SOT363A PIN 1 2 3 4 5 6 SYMBOL b1 e1 c2 b2 e2 c1 base 1 emitter 1 collector 2 base 2 emitter 2 collector 1 DESCRIPTION
5
4 c1 b2 e1 e2
MAM210
c2
DESCRIPTION Dual
transistor with two silicon
NPN RF dies in a surface mount, 6-pin SOT363 (S-mini) package. The
transistors are primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and satellite TV-tuners. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. − − 14 − − − −
1 2 3 Top view Marking code: N0.
Fig.1 Simplified outline and symbol.
TYP.
MAX. − − − − 1.6 230 115
UNIT
Any single
transistor Cre fT s 21 GUM F Rth j-s
2
feedback capacitance transition frequency insertion power gain maximum unilateral power gain noise figure thermal resistance from junction to soldering point
Ie = 0; VCB = 3 V; f = 1 MHz IC = 5 mA; VCE = 3V; f = 1 GHz IC = 5 mA; VCE = ...