N-CHANNEL MOSFET. SVF1N60D Datasheet

SVF1N60D MOSFET. Datasheet pdf. Equivalent

SVF1N60D Datasheet
Recommendation SVF1N60D Datasheet
Part SVF1N60D
Description 600V N-CHANNEL MOSFET
Feature SVF1N60D; SVF1N60M/MJ/N/B/D_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFM/MJ/N/B/D is an N-chan.
Manufacture Silan Microelectronics
Datasheet
Download SVF1N60D Datasheet




Silan Microelectronics SVF1N60D
SVF1N60M/MJ/N/B/D_Datasheet
1A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVFM/MJ/N/B/D is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary F-CellTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
1A,600V,RDS(on)typ.=8.2Ω@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF1N60M
SVF1N60M
SVF1N60MJ
SVF1N60N
SVF1N60B
SVF1N60BTR
SVF1N60D
SVF1N60DTR
Package
TO-251-3L
TO-251D-3L
TO-251J-3L
TO-126-3L
TO-92-3L
TO-92-3L
TO-252-2L
TO-252-2L
Marking
SVF1N60M
SVF1N60M
SVF1N60MJ
SVF1N60N
F1N60
F1N60
SVF1N60D
SVF1N60D
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
Material
Pb free
Pb free
Pb free
Pb free
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tube
Bulk
Bulk
AMMO
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Tape & Reel
REV:1.4
2012.06.04
Page 1 of 11



Silan Microelectronics SVF1N60D
SVF1N60M/MJ/N/B/D_Datasheet
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25°C
TC=100°C
Power Dissipation(TC=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
SVF1N
60B
1.5
9
0.07
Rating
SVF1N SVF1N
60M/D
60MJ
600
±30
1.0
0.63
4.0
28 29
0.22 0.23
52
-55+150
-55+150
SVF1N
60N
Unit
V
V
A
A
25 W
0.20 W/°C
mJ
°C
°C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
SVF1N
60B
13.89
120
Rating
SVF1N SVF1N
60M/D
60MJ
4.46 4.31
110 110
SVF1N
60N
5
62.5
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Test conditions
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VGS=±30V, VDS=0V
VGS=VDS, ID=250µA
RDS(on) VGS=10V, ID=0.5 A
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS=25V,VGS=0V,
f=1.0MHZ
VDD=300V,ID=1.0A,
RG=25Ω
(Note 2,3)
VDS=480V,ID=1.0A,
VGS=10V
(Note 2,3)
Min.
600
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
8.2
120.3
19.0
0.8
6.47
13.27
7.73
15.87
3.45
1.10
1.39
Max.
--
1.0
±100
4.0
11
--
--
--
--
--
--
--
--
--
--
Unit
V
µA
nA
V
Ω
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.4
2012.06.04
Page 2 of 11



Silan Microelectronics SVF1N60D
SVF1N60M/MJ/N/B/D_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current IS Integral Reverse P-N
Pulsed Source Current
Junction Diode in the
ISM MOSFET
Diode Forward Voltage
VSD IS=1.0A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
Trr IS=1.0A, VGS=0V,
Qrr dIF/dt=100A/µS(Note 2)
Notes:
1. L=30mHIAS=1.74A, VDD=85V, RG=25Ω,starting TJ=25°C;
2. Pulse Test: Pulse width 300μs,Duty cycle2%;
3. Essentially independent of operating temperature.
Min.
--
--
--
--
--
Typ.
--
--
--
246.08
0.53
Max.
SVF1 Others
N60B
1.0
1.5 4.0
1.5
--
--
Unit
A
V
ns
µC
TYPICAL CHARACTERISTICS
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.4
2012.06.04
Page 3 of 11







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