BFN16, BFN18
NPN Silicon High-Voltage Transistors
Suitable for video output stages in TV sets and
1 2 3
switching po...
BFN16, BFN18
NPN Silicon High-Voltage
Transistors
Suitable for video output stages in TV sets and
1 2 3
switching power supplies
High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN17, BFN19 (
PNP)
2
VPS05162
Type BFN16 BFN18
Maximum Ratings Parameter
Marking DD DE 1=B 1=B
Pin Configuration 2=C 2=C 3=E 3=E
Package SOT89 SOT89
Symbol VCEO VCBO VEBO
BFN16 250 250 5
BFN18 300 300 5
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 °C Junction temperature Storage temperature
IC ICM IB IBM Ptot Tj Tstg
200 500 100 200 1 150 -65 ... 150
mA
W °C
Thermal Resistance Junction - soldering point1) RthJS
20
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-30-2001
BFN16, BFN18
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 VCB = 250 V, IE = 0 Collector cutoff current VCB = 200 V, IE = 0 , TA = 150 °C VCB = 250 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V Collector-emitter satu...
