Power-Transistor. 2N03L20 Datasheet

2N03L20 Power-Transistor. Datasheet pdf. Equivalent

2N03L20 Datasheet
Recommendation 2N03L20 Datasheet
Part 2N03L20
Description Power-Transistor
Feature 2N03L20; OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 .
Manufacture Infineon
Datasheet
Download 2N03L20 Datasheet




Infineon 2N03L20
OptiMOS® Power-Transistor
Features
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
IPD30N03S2L-20
Product Summary
V DS
R DS(on),max
ID
30 V
20 m
30 A
PG-TO252-3-11
Type
IPD30N03S2L-20
Package
Marking
PG-TO252-3-11 2N03L20
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=30A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
30
30
120
70
±20
60
-55 ... +175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2006-07-18



Infineon 2N03L20
IPD30N03S2L-20
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area3)
min.
Values
typ.
Unit
max.
- - 2.5 K/W
- - 100
- - 75
- - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
30
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=23 µA 1.2 1.6 2.0
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.01
1 µA
V DS=30 V, V GS=0 V,
T j=125 °C2)
-
1 100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1 100 nA
Drain-source on-state resistance
R DS(on) V GS=4.5 V, I D=18 A
- 23.5 31 m
Drain-source on-state resistance
RDS(on) V GS=10 V, I D=18 A,
- 14.5 20.0 m
Rev. 1.0
page 2
2006-07-18



Infineon 2N03L20
IPD30N03S2L-20
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss - 530 - pF
C oss
V GS=0 V, V DS=25 V,
f =1 MHz
-
220
-
Crss - 60 -
t d(on)
- 5 - ns
tr
V DD=15 V, V GS=10 V,
-
15
-
t d(off)
I D=30 A, R G=12.7
-
19
-
t f - 10 -
Gate Charge Characteristics2)
Gate to source charge
Q gs
- 2 - nC
Gate to drain charge
Gate charge total
Q gd V DD=24 V, I D=30 A,
Q g V GS=0 to 10 V
-
-
5-
14 19
Gate plateau voltage
V plateau
- 3.9 - V
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
Diode forward voltage
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=30 A,
T j=25 °C
- - 30 A
- - 120
- 0.9 1.3 V
Reverse recovery time2)
t rr
V R=15 V, I F=I S,
di F/dt =100 A/µs
- 15 - ns
Reverse recovery charge2)
Q rr
V R=15 V, I F=I S,
di F/dt =100 A/µs
- 2 - nC
1) Current is limited by bondwire; with an R thJC = 2.5K/W the chip is able to carry 43A at 25°C. For detailed information
see Application Note ANPS071E at www.infineon.com/optimos
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2006-07-18







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