BIDIRECTIONAL TRANSCEIVER. IDT54FCT16245CT Datasheet

IDT54FCT16245CT TRANSCEIVER. Datasheet pdf. Equivalent

IDT54FCT16245CT Datasheet
Recommendation IDT54FCT16245CT Datasheet
Part IDT54FCT16245CT
Description FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVER
Feature IDT54FCT16245CT; IDT54/74FCT16245T/AT/CT/ET FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVER FAST CMOS 16-BIT BIDIRECTIONAL.
Manufacture IDT
Datasheet
Download IDT54FCT16245CT Datasheet




IDT IDT54FCT16245CT
IDT54/74FCT16245T/AT/CT/ET
FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVER
FAST CMOS 16-BIT
BIDIRECTIONAL
TRANSCEIVER
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
IDT54/74FCT16245T/AT/CT/ET
FEATURES:
• 0.5 MICRON CMOS Technology
• High-speed, low-power CMOS replacement for ABT functions
• Typical tSK(o) (Output Skew) < 250ps
• Low input and output leakage 1µA (max.)
• ESD > 2000V per MIL-STD-883, Method 3015; > 200V using
machine model (C = 200pF, R = 0)
• High drive outputs (–32mA IOH, 64mA IOL)
• Power off disable outputs permit “live insertion”
• Typical VOLP (Output Ground Bounce) < 1.0V at VCC = 5V,
TA = 25°C
• Available in the following packages:
– Industrial: SSOP, TSSOP
– Military: CERPACK
DESCRIPTION:
The FCT16245T 16-bit transceiver is built using advanced dual metal CMOS
technology. These high-speed, low-power transceivers are ideal for
synchronous communication between two busses (A and B). The Direction and
OutputEnablecontrolsoperatethesedevicesaseithertwo independent 8-bit
transceivers or one 16-bit transceiver. The direction control pin (xDIR) controls
the direction of data flow. The output enable pin (xOE) overrides the direction
control and disables both ports. All inputs are designed with hysteresis for
improved noise margin.
The FCT16245T is ideally suited for driving high-capacitance loads and low-
impedance backplanes. The output buffers are designed with power off disable
capability to allow "live insertion" of boards when used as backplane drivers.
FUNCTIONAL BLOCK DIAGRAM
1 DIR
1A1
1A2
1A3
1A4
1A5
1A6
1A7
1A8
1OE
1B1
1B2
1B3
1B4
1B5
1B6
1B7
1B8
2 DIR
2A1
2A2
2A3
2A4
2A5
2A6
2A7
2A8
2OE
2B1
2B2
2B3
2B4
2B5
2B6
2B7
2B8
IDT and the IDT logo are registered trademark of Integrated Device Technology, Inc.
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
1
© 2009 Integrated Device Technology, Inc.
JANUARY 2009
DSC-5456/9



IDT IDT54FCT16245CT
IDT54/74FCT16245T/AT/CT/ET
FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVER
PIN CONFIGURATION
1DIR
1B1
1B2
GND
1B3
1B4
VCC
1B5
1B6
GND
1B7
1B8
2B1
2B2
GND
2B3
2B4
VCC
2B5
2B6
GND
2B7
2B8
2DIR
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48 1OE
47 1A1
46 1A2
45 GND
44 1A3
43 1A4
42 VCC
41 1A5
40 1A6
39 GND
38 1A7
37 1A8
36 2A1
35 2A2
34 GND
33 2A3
32 2A4
31 VCC
30 2A5
29 2A6
28 GND
27 2A7
26 2A8
25 2OE
SSOP/ TSSOP CERPACK
TOP VIEW
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
VTERM(2)
VTERM(3)
TSTG
IOUT
Description
Terminal Voltage with Respect to GND
Terminal Voltage with Respect to GND
Storage Temperature
DC Output Current
Max
–0.5 to +7
–0.5 to VCC+0.5
–65 to +150
–60 to +120
Unit
V
V
°C
mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. All device terminals except FCT162XXXT and FCT166XXXT (APort) Output and
I/O terminals.
3. Output and I/O terminals terminals for FCT162XXX and FCT166XXXT (A-Port).
CAPACITANCE (TA = +25°C, F = 1.0MHz)
Symbol
Parameter(1)
Conditions Typ. Max. Unit
CIN
Input Capacitance
VIN = 0V
3.5
6 pF
COUT
Output Capacitance VOUT = 0V
3.5
8
pF
NOTE:
1. This parameter is measured at characterization but not tested.
PIN DESCRIPTION
Pin Names
xOE
xDIR
xAx
xBx
Description
Output Enable Inputs (Active LOW)
Direction Control Inputs
Side A Inputs or 3-State Outputs
Side B Inputs or 3-State Outputs
FUNCTION TABLE(1)
Inputs
xOE xDIR
LL
LH
HX
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
Z = High-Impedance
Outputs
Bus B Data to Bus A
Bus A Data to Bus B
High Z State
2



IDT IDT54FCT16245CT
IDT54/74FCT16245T/AT/CT/ET
FAST CMOS 16-BIT BIDIRECTIONAL TRANSCEIVER
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Industrial: TA = –40°C to +85°C, VCC = 5.0V ±10%; Military: TA = –55°C to +125°C, VCC = 5.0V ±10%
Symbol
Parameter
Test Conditions(1)
Min. Typ.(2)
VIH Input HIGH Level
Guaranteed Logic HIGH Level
2—
VIL Input LOW Level
Guaranteed Logic LOW Level
——
IIH Input HIGH Current (Input pins)(5) VCC = Max.
VI = VCC
——
Input HIGH Current (I/O pins)(5)
——
IIL Input LOW Current (Input pins)(5)
VI = GND
——
Input LOW Current (I/O pins)(5)
——
IOZH High Impedance Output Current VCC = Max.
VO = 2.7V
——
IOZL (3-State Output pins)(5)
VO = 0.5V
——
VIK Clamp Diode Voltage
VCC = Min., IIN = –18mA
— –0.7
IOS Short Circuit Current
VCC = Max., VO = GND(3)
–80 –140
VH Input Hysteresis
ICCL Quiescent Power Supply Current VCC = Max.
ICCH VIN = GND or VCC
ICCZ
— 100
—5
Max.
0.8
±1
±1
±1
±1
±1
±1
–1.2
–250
500
Unit
V
V
µA
µA
V
mA
mV
µA
OUTPUT DRIVE CHARACTERISTICS
Symbol
IO
VOH
VOL
IOFF
Parameter
Output Drive Current
Output HIGH Voltage
Output LOW Voltage
Input/Output Power Off Leakage(5)
Test Conditions(1)
VCC = Max., VO = 2.5V(3)
VCC = Min.
IOH = –3mA,
VIN = VIH or VIL
IOH = –12mA MIL
IOH = –15mA IND
IOH = –24mA MIL
IOH = –32mA IND(4)
VCC = Min.
IOL = 48mA MIL
VIN = VIH or VIL
IOL = 64mA IND
VCC = 0V, VIN or VO 4.5V
Min. Typ.(2)
–50 —
–2.5 3.5
2.4 3.5
23
— 0.2
——
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at VCC = 5.0V, +25°C ambient.
3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second.
4. Duration of the condition can not exceed one second.
5. The test limit for this parameter is ±5µA at TA = –55°C.
Max. Unit
–180 mA
—V
—V
—V
0.55 V
±1 μA
3







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