BFN20

NPN Silicon High-Voltage Transistor q q q q q BFN 20 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary type: BFN 21 (PNP) Type BFN 20 Marking DC Ordering Code (tape and reel) Q62702-F1058 Pin Configuration 1 2 3 B C E Package1) SOT-89 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage, RBE = 2.7 kΩ Emitter-base voltage Collector current Peak collector current Total power dissipation, TS = 120 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCE0 VCB0 VCER VEB0 IC ICM Ptot Tj Tstg Values 300 300 300 5 50 100 1 150 – 65 … + 150 Unit V mA W ˚C 90 30 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BFN 20 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA Collector-base breakdown voltage IC = 10 µA Collector-emitter breakdown voltage IC = 10 µA, RBE = 2.7 kΩ Emitter-base breakdown voltage IE = 10 µA Collector-base cutoff current VCB = 250 V VCB = 250 V, TA = 150 ˚C Collector cutoff current VCE = 300 V, RBE = 2.7 kΩ VCE = 300 V, TA = 150 ˚C, RBE = 2.7 kΩ Emitter-base cutoff current VEB = 5 V DC cur...