2SC2983 Transistor Datasheet

2SC2983 Datasheet, PDF, Equivalent


Part Number

2SC2983

Description

Silicon NPN Epitaxial Type Transistor

Manufacture

GME

Total Page 5 Pages
Datasheet
Download 2SC2983 Datasheet


2SC2983
Silicon NPN Epitaxial Type
FEATURES
High transition frequency:fT=100MHz(typ).
Complementary to 2SA1225.
Pb
Lead-free
APPLICATIONS
Power Amplifier Applications.
Driver Stage Amplifier Applications.
Production specification
2SC2983
TO-251
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
160 V
VCEO
Collector-Emitter Voltage
160 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current
1.5 A
IB Base Current
0.3 A
PC Collector Power Dissipation
1W
Tj ,Tstg
Junction and Storage temperature range
-55 to +150
V/(W)011
Rev.A
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1

2SC2983
Production specification
Silicon NPN Epitaxial Type
2SC2983
ELECTRICAL CHARACTERISTICS@ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
VCEO
VEBO
IC=10mA,IB=0
IE=1mA,IC=0
160
5
Collector cut-off current
ICBO VCB=160V,IE=0
1.0
UNIT
V
V
uA
Emitter cut-off current
IEBO
VEBO=5V,IC=0
1.0 uA
DC current gain
hFE
VCE=5V,IC=100mA
70
240
Collector-emitter saturation voltage VCE(sat) IC=0.5A,IB=0.05A
1.5 V
Base-emitter voltage
VBE VCE=5V,IC=0.5A
1.0 V
Transition frequency
fT VCE=10V,IC=100mA
100 MHz
Collector output capacitance
Cob VCB=10V,IE=0,f=1MHz
CLASSIFICATION OF hFE(1)
Rank
O
Range
70-140
25 pF
Y
120-240
V/(W)011
Rev.A
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2


Features Silicon NPN Epitaxial Type FEATURES High transition frequency:fT=100MHz(t yp).  Complementary to 2SA1225. Pb Lead-free APPLICATIONS  Power Amp lifier Applications.  Driver Stage A mplifier Applications. Production spec ification 2SC2983 TO-251 TO-252 MAXI MUM RATING operating temperature range applies unless otherwise specified Sym bol Parameter Value Units VCBO Col lector-Base Volage 160 V VCEO Collec tor-Emitter Voltage 160 V VEBO Emitt er-Base Voltage 5V IC Collector Curre nt 1.5 A IB Base Current 0.3 A PC C ollector Power Dissipation 1W Tj ,Tst g Junction and Storage temperature ran ge -55 to +150 ℃ V/(W)011 Rev.A w ww.gmesemi.com 1 Production specificat ion Silicon NPN Epitaxial Type 2SC298 3 ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX C ollector-emitter breakdown voltage Emit ter-base breakdown voltage VCEO VEBO IC=10mA,IB=0 IE=1mA,IC=0 160 5 Collector cut-off current ICB.
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