PNP Transistor. 2SA1225 Datasheet

2SA1225 Transistor. Datasheet pdf. Equivalent

2SA1225 Datasheet
Recommendation 2SA1225 Datasheet
Part 2SA1225
Description PNP Transistor
Feature 2SA1225; JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SA122.
Manufacture JCST
Datasheet
Download 2SA1225 Datasheet




JCST 2SA1225
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
2SA1225 TRANSISTOR (PNP)
FEATURES
z High Transition Frequency
z Complementary to 2SC2983
APPLICATIONS
z Power Amplifier Applications
z Driver Stage Amplifier Applications
TO-252-2L
1. BASE
2. COLLECTOR
3 .EMITTER
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-160
-160
-5
-1.5
1
150
-55~150
Unit
V
V
V
A
W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
* Pulse test
Symbol
V(BR)CBO
V
*
(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Cob
Test conditions
IC=-1mA ,IE=0
IC=-10mA, IB=0
IE=-1mA,IC=0
VCB=160V,IE=0
VEB=-5V,IC=0
VCE=-5V, IC=-0.1A
IC=-0.5A,IB=-50mA
VCE=-5V, IC=-0.5A
VCE=-10V ,IC=-100mA
VCB=-10V ,IE=0,f=1MHz
Min Typ Max Unit
-160
V
-160
V
-5 V
-0.1 μA
-0.1 μA
70 240
-1.5 V
-1 V
100 MHz
30 pF
CLASSIFICATION OF hFE
Rank
Range
O
70-140
Y
120-240
A,Jun,2011







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