Silicon Transistor. 2SC4003 Datasheet

2SC4003 Transistor. Datasheet pdf. Equivalent

2SC4003 Datasheet
Recommendation 2SC4003 Datasheet
Part 2SC4003
Description NPN Epitaxial Planar Silicon Transistor
Feature 2SC4003; NPN Epitaxial Planar Silicon Transistor FEATURES  High hFE hFE=60 to 200.  Low VCE(sat)=0.6V. Pb.
Manufacture GME
Datasheet
Download 2SC4003 Datasheet




GME 2SC4003
NPN Epitaxial Planar Silicon Transistor
FEATURES
High hFE hFE=60 to 200.
Low VCE(sat)=0.6V.
Pb
Lead-free
Production specification
2SC4003
TO-251
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
VCEO
Collector-Base Volage
Collector-Emitter Voltage
400 V
400 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current(DC)
0.2 A
PC Collector Power Dissipation
1W
Tj ,Tstg
Junction and Storage temperature range
-55 to +150
V/(W)014
Rev.A
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1



GME 2SC4003
Production specification
NPN Epitaxial Planar Silicon Transistor
2SC4003
ELECTRICAL CHARACTERISTICS@ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
VCBO
VCEO
VEBO
IC=10uA,Ie=0
IC=1mA,IB=0
IE=10uA,IC=0
400
400
5
Collector cut-off current
ICBO VCB=300V,IE=0
0.1
UNIT
V
V
V
uA
Emitter cut-off current
IEBO
VEBO=4V,IC=0
0.1 uA
DC current gain
hFE
VCE=10V,IC=50mA
60
200
Collector-emitter saturation voltage VCE(sat0 IC=50mA,IB=5mA
0.6 V
Base-emitter saturation voltage
VBE(sat0 IC=50mA,IB=5mA
1V
Transition frequency
fT VCE=30V,IC=10mA
70 MHz
CLASSIFICATION OF hFE(1)
Rank
Range
D
60-120
E
100-200
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
V/(W)014
Rev.A
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GME 2SC4003
NPN Epitaxial Planar Silicon Transistor
Production specification
2SC4003
V/(W)014
Rev.A
www.gmesemi.com
3







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