2SC4373

Production specification NPN Silicon Epitaxial Planar Transistor FEATURES  High transition frequency:VCEO=120V.  High voltage:VCE(sat)=0.5V(Max). Pb Lead-free  PC=1W(Mounted on ceramic substrate).  Small flat package.  Complementary: KTA1661. 2SC4373 APPLICATIONS  Power amplifier application.  Power switching application. ORDERING INFORMATION Type No. Marking 2SC4373 CO/CY SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 120 VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage 120 5 IC Collector Current -Continuous 800 IB Base current 160 PC Collector Dissipation 500 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mA mW ℃ E014 Rev.A www.gmesemi.com 1 Production specification NPN Silicon Epitaxial Planar Transistor 2SC4373 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions...