2SC4374

NPN Silicon Epitaxial Planar Transistor FEATURES  Complementary to 2SA1662 Pb Lead-free Production specification 2SC4374 ORDERING INFORMATION Type No. Marking 2SC4374 EO/EY SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 80 VCEO Collector-Emitter Voltage 80 VEBO Emitter-Base Voltage 5 IC Collector Current 0.4 PC Collector Power Dissipation 500 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V A mW ℃ E121 Rev.A www.gmesemi.com 1 Production specification NPN Silicon Epitaxial Planar Transistor 2SC4374 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 80 V Collector- emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 80 V Emitter- base breakdown voltage V(BR)EBO IE=1mA, IC=0 5 V Collector cut-off current ICBO VCB=80V,IE=0...