Power MOSFET. RU7588R Datasheet

RU7588R MOSFET. Datasheet pdf. Equivalent

RU7588R Datasheet
Recommendation RU7588R Datasheet
Part RU7588R
Description N-Channel Advanced Power MOSFET
Feature RU7588R; RU7588R N-Channel Advanced Power MOSFET Features • 80V/80A, RDS (ON) =7mΩ(Typ.) @ VGS=10V • Ultra L.
Manufacture Ruichips
Datasheet
Download RU7588R Datasheet




Ruichips RU7588R
RU7588R
N-Channel Advanced Power MOSFET
Features
• 80V/80A,
RDS (ON) =7m(Typ.) @ VGS=10V
Ultra Low On-Resistance
Exceptional dv/dt capability
Fast Switching and Fully Avalanche Rated
100% avalanche tested
175°C Operating Temperature
• Lead Free and Green Available
Applications
• High Current Switching Applications
Pin Description
TO-220
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
CopyrightRuichips Semiconductor Co., Ltd
Rev. D – MAY., 2013
Rating
80
±25
175
-55 to 175
80
320
80
65
150
75
1
225
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
www.ruichips.com



Ruichips RU7588R
RU7588R
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU7588R
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
VGS=0V, IDS=-250A
VDS= 80V, VGS=0V
TJ=85°C
VDS=VGS, IDS=-250A
VGS=±25V, VDS=0V
VGS= 10V, IDS=40A
80
2
V
1
A
30
34V
±100 nA
7 9 m
Diode Characteristics
VSD
Diode Forward Voltage
trr Reverse Recovery Time
qrr Reverse Recovery Charge
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=40 A, VGS=0V
ISD=40A, dlSD/dt=100A/s
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS= 30V,
Frequency=1.0MHz
VDD=30V, RL=35,
IDS= 40A, VGEN= 10V,
RG=7
VDS=60V, VGS= 10V,
IDS=40A
1.2 V
48 ns
105 nC
1.4
3400
450
170
14
16
31
54
pF
ns
64
13 nC
22
Notes:
Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A.
Pulse width limited by safe operating area.
Limited by TJmax, IAS =30A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C.
Pulse test ; Pulse width300s, duty cycle2%.
Guaranteed by design, not subject to production testing.
CopyrightRuichips Semiconductor Co., Ltd
Rev. D – MAY., 2013
2
www.ruichips.com



Ruichips RU7588R
Typical Characteristics
Power Dissipation
RU7588R
Drain Current
Tj - Junction Temperature (°C)
Safe Operation Area
Tj - Junction Temperature (°C)
Thermal Transient Impedance
VDS - Drain-Source Voltage (V)
Square Wave Pulse Duration (sec)
CopyrightRuichips Semiconductor Co., Ltd
Rev. D – MAY., 2013
3
www.ruichips.com







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