SILICON TRANSISTOR. MMBT8050LT1 Datasheet

MMBT8050LT1 TRANSISTOR. Datasheet pdf. Equivalent

MMBT8050LT1 Datasheet
Recommendation MMBT8050LT1 Datasheet
Part MMBT8050LT1
Description NPN EPITAXIAL SILICON TRANSISTOR
Feature MMBT8050LT1; RoHS MMBT8050LT1 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS .
Manufacture WEJ
Datasheet
Download MMBT8050LT1 Datasheet




WEJ MMBT8050LT1
RoHS
MMBT8050LT1
NPN EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER OF PORTABLE
RADIOS IN CLASS
B PUSH-PULL OPERATION
DComplement to MMPT8550LT1
TCollector Current:Ic=500mA
.,LCollector Dissipation:Pc=225mW(Tc=25oC)
SOT-23
1
1.
2.4
1.3
3
2
1.BASE
2.EMITTER
3.COLLECTOR
O Unit:mm
CABSOLUTE MAXIMUM RATINGS
ICCharacteristic
Collector-Base Voltage
NCollector-Emitter Voltage
Emitter-Base Voltage
OCollector Current
Collector Dissipation Ta=25oC*
Junction Temperature
RStorage Temperature
Symbol
VCBO
VCEO
VEBO
Ic
PD
Tj
Tstg
Rating
40
25
6
500
225
150
-55-150
(Ta=25 oC)
Unit
V
V
V
mA
mW
OC
O
C
TElectrical Characteristics
CCharacteristic
Collector-Base Breakdown Voltage
ECollector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
LCollector Cutoff Current
Emitter Cutoff Current
EDC Current Gain
DC Current Gain
JDC Current Gain
Collector-Emitter Saturation Voltage
EBase-Emitter Saturation Voltage
Base-Emitter Voltage
WOutput Capacitance
(Ta=25 oC)
Symbol MIN. TYP. MAX. Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VBE(sat)
VBE
Cob
40
25
6
100
100
45
85 160 300
30
0.28 0.5
0.98 1.2
0.66 1
9
V IC=100uA IE=0
V IC=1mA IB=0
V IE=100uA IC=0
nA VCB=35V, IE=0
nA VEB=6V, IC=0
VCE=1V, IC=5mA
VCE=1V, IC=50mA
VCE=1V, IC=500mA
V IC=500mA, IB=50mA
V IC=500mA, IB=50mA
V ICE=1V, IC=10mA
PF VCB=10V, IE=0,f=1MHz
Current Gain-Bandwidth Product
fT
100 190
MHz VCE=10V, IC=50mA
*Total Device Dissipation:FR=1X0.75X0.062 in Board ,Derate 25oC
# Pulse Test: Pulse Width 300uS ,Duty cycle 2%
MMBT8050LT1=A6
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com



WEJ MMBT8050LT1
RoHS
MMBT8050LT1
Typical Characteristics
TDTypical Pulsed Current Gain
vs Collector Current
.,L300
250
125 C
VcE=1V
200
O150 25 C
C100
-40 C
50
1 10 100 1000
ICIC-COLLECTOR CURRENT(mA)
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
=10
0.3
125 C
0.2 25 C
0.1 -40 C
0
10 100 1000
IC-COLLECTOR CURRENT(mA)
RONBase-Emitter Saturation
Voltage vs Collector Current
T1.2
=10
C1
E0.8 -40 C
25 C
125 C
L0.6
E0.410
100 1000
WEJIC-COLLECTOR CURRENT(mA)
Gain Bandnith Product
vs Collector Current
1000
VcE=10V
800
600
400
200
0
1
10 20
50 100
IC-COLLECTOR CURRENT(mA)
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com







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