Amplifier Transistor. MMBT8099LT1G Datasheet

MMBT8099LT1G Transistor. Datasheet pdf. Equivalent

MMBT8099LT1G Datasheet
Recommendation MMBT8099LT1G Datasheet
Part MMBT8099LT1G
Description Amplifier Transistor
Feature MMBT8099LT1G; MMBT8099LT1G Amplifier Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR.
Manufacture ON Semiconductor
Datasheet
Download MMBT8099LT1G Datasheet




ON Semiconductor MMBT8099LT1G
MMBT8099LT1G
Amplifier Transistor
NPN Silicon
Features
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
Symbol
VCEO
VCBO
VEBO
IC
Value
80
80
6.0
500
Unit
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FR−5 Board
(Note 1) TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
(Note 1)
RqJA
556 °C/W
Total Device Dissipation Alumina
Substrate (Note 2) TA = 25°C
Derate above 25°C
PD
300 mW
2.4 mW/°C
Thermal Resistance, Junction-to-Ambient
(Note 2)
RqJA
417 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 X 0.75 X 0.062 in.
2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
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COLLECTOR
3
1
BASE
2
EMITTER
1
2
3
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
KB M G
G
1
KB = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBT8099LT1G SOT−23 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2001
October, 2016 − Rev. 3
1
Publication Order Number:
MMBT8099LT1/D



ON Semiconductor MMBT8099LT1G
MMBT8099LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 10 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 3)
V(BR)CEO
80
Vdc
V(BR)CBO
80
Vdc
V(BR)EBO
6.0
Vdc
ICES
mAdc
− 0.1
ICBO
mAdc
− 0.1
−−
IEBO
mAdc
− 0.1
−−
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 100 mAdc, IB = 5.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
Base−Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
SMALL− SIGNAL CHARACTERISTICS
hFE
VCE(sat)
VBE(on)
100 300
100 −
75 −
− 0.4
− 0.3
−−
0.6 0.8
Vdc
Vdc
Current −Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT MHz
150 −
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
− 6.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
pF
− 25
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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2



ON Semiconductor MMBT8099LT1G
MMBT8099LT1G
5.0 ms
+10 V
0
tr = 3.0 ns
TURN-ON TIME
-1.0 V
VCC
+40 V
TURN-OFF TIME
+VBB
VCC
+40 V
100
Vin RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
5.0 ms
tr = 3.0 ns
100
Vin RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
300
TJ = 25°C
200
100
70
50
5.0 V
VCE = 1.0 V
30
1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 2. Current−Gain − Bandwidth Product
40
20
10
8.0
6.0
4.0
2.0
0.1 0.2
TJ = 25°C
Cibo
Cobo
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
50 100
1.0 k
700 VCC = 40 V
500
IC/IB = 10
IB1 = IB2
300 TJ = 25°C
200
ts
100
70
50 tf
30
20
td @ VBE(off) = 0.5 V
10
10 20 30
tr
50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Switching Times
1.0 k
700
500
300
200
100
70
50 CURRENT LIMIT
30
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
20
DUTY CYCLE 10%
10
200
1.0 2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active−Region Safe Operating Area
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3







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