MMBT8099LT1G
Amplifier Transistor
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
C...
MMBT8099LT1G
Amplifier
Transistor
NPN Silicon
Features
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS
Symbol VCEO VCBO VEBO
IC
Value 80 80 6.0 500
Unit Vdc Vdc Vdc mAdc
Characteristic
Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C
Symbol PD
Max
225 1.8
Unit
mW mW/°C
Thermal Resistance, Junction-to-Ambient (Note 1)
RqJA
556 °C/W
Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C
PD 300 mW
2.4 mW/°C
Thermal Resistance, Junction-to-Ambient (Note 2)
RqJA
417 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be a...
