BFN37, BFN39
PNP Silicon High-Voltage Transistors
Suitabled for video output stages in TV sets and
4
switching power...
BFN37, BFN39
PNP Silicon High-Voltage
Transistors
Suitabled for video output stages in TV sets and
4
switching power supplies
High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN36, BFN38 (
NPN)
3 2 1
VPS05163
Type BFN37 BFN39
Maximum Ratings Parameter
Marking BFN 37 BFN 39 1=B 1=B
Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C
Package SOT223 SOT223
Symbol VCEO VCBO VEBO
BFN37 250 250 5
BFN39 300 300 5
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature
IC ICM IB IBM Ptot Tj Tstg
200 500 100 200 1.5 150 -65 ... 150
mA
W °C
Thermal Resistance Junction - soldering point1) RthJS
17
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-30-2001
BFN37, BFN39
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 VCB = 250 V, IE = 0 Collector cutoff current VCB = 200 V, IE = 0 , TA = 150 °C VCB = 250 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V C...
