BFP136W
NPN Silicon RF Transistor
For power amplifier in DECT and PCN systems fT = 5.5GHz Gold metalization for hi...
BFP136W
NPN Silicon RF
Transistor
For power amplifier in DECT and PCN systems fT = 5.5GHz Gold metalization for high reliability
3 4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP136W
Maximum Ratings Parameter
Marking PAs 1=E
Pin Configuration 2=C 3=E 4=B
Package SOT343
Unit V
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 12 20 20 2 150 20 1000 150 -65 ... 150 -65 ... 150
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 60°C 1) Junction temperature Ambient temperature Storage temperature
mA mW °C
Thermal Resistance Junction - soldering point 2) RthJS
90
K/W
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA
1
Jun-22-2001
BFP136W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 80 mA, VCE = 5 V hFE 50 100 200 IEBO 1 µA ICBO 50 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit
2
Jun-22-2001
BFP136W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. AC charact...
