Document
Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available
BFP182R
3 2
4 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP182R
Marking
Pin Configuration
RGs 1=E 2=C 3=E 4 = B -
-
Package SOT143R
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 69 °C Junction temperature Storage temperature
VCEO VCES VCBO VEBO IC IB Ptot
TJ TStg
Value 12 20 20 2 35 4 250
150 -55 ... 150
Unit V
mA mW °C
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point2)
RthJS
325 K/W
1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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BFP182R
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 10 mA, VCE = 8 V, pulse measured
V(BR)CEO 12
-
-V
ICES
- - 100 µA
ICBO
- - 100 nA
IEBO
- - 1 µA
hFE 70 100 140 -
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BFP182R
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded
fT 6 8 Ccb - 0.25 0.4
Unit
GHz pF
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded
Cce - 0.3 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded
Ceb - 0.8 -
Minimum noise figure
IC = 3 mA, VCE = 6 V, ZS = ZSopt, f = 900 MHz
IC = 3 mA, VCE = 6 V, ZS = ZSopt, f = 1.8 GHz
NFmin
dB - 0.9 - 1.3 -
Power gain, maximum stable1)
IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz
Gms
- 22 - dB
Power gain, maximum available2)
IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz
Gma
- 16.5 - dB
Transducer gain
IC = 10 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 900 MHz
IC = 10 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 1.8 GHz
|S21e|2
dB
- 18 -
- 12 -
1Gms = |S21 / S12| 2Gma = |S21e / S12e| (k-(k²-1)1/2)
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Total power dissipation Ptot = ƒ(TS)
BFP182R
Permissible Pulse Load RthJS = ƒ(tp)
Ptot RthJS
300 mW
200
150
100
50
00 20 40 60 80 100 120 °C 150
TS
Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp)
10 2
10 3 K/W
10 2
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10
1
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
Ptotmax/PtotDC
-
D=0
0.005
0.01
0.02
10 1
0.05 0.1
0.2
0.5
10
0
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
4
2014-04-07
Package SOT143R
BFP182R
5 2014-04-07
BFP182R
Edition 2009-11-16
Published by Infineon Technologies AG 81726 Munich, Germany
2009 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ().
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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