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BFP182R Dataheets PDF



Part Number BFP182R
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Low Noise Silicon Bipolar RF Transistor
Datasheet BFP182R DatasheetBFP182R Datasheet (PDF)

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFP182R 3 2 4 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP182R Marking Pin Configuration RGs 1=E 2=C 3=E 4 = B - - Package SOT143R Maximum Ratings at TA = 25 °C, unless otherwise specified .

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Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFP182R 3 2 4 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP182R Marking Pin Configuration RGs 1=E 2=C 3=E 4 = B - - Package SOT143R Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 69 °C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg Value 12 20 20 2 35 4 250 150 -55 ... 150 Unit V mA mW °C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 325 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2014-04-07 BFP182R Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 10 mA, VCE = 8 V, pulse measured V(BR)CEO 12 - -V ICES - - 100 µA ICBO - - 100 nA IEBO - - 1 µA hFE 70 100 140 - 2 2014-04-07 BFP182R Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded fT 6 8 Ccb - 0.25 0.4 Unit GHz pF Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Cce - 0.3 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Ceb - 0.8 - Minimum noise figure IC = 3 mA, VCE = 6 V, ZS = ZSopt, f = 900 MHz IC = 3 mA, VCE = 6 V, ZS = ZSopt, f = 1.8 GHz NFmin dB - 0.9 - 1.3 - Power gain, maximum stable1) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Gms - 22 - dB Power gain, maximum available2) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Gma - 16.5 - dB Transducer gain IC = 10 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 900 MHz IC = 10 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 1.8 GHz |S21e|2 dB - 18 - - 12 - 1Gms = |S21 / S12| 2Gma = |S21e / S12e| (k-(k²-1)1/2) 3 2014-04-07 Total power dissipation Ptot = ƒ(TS) BFP182R Permissible Pulse Load RthJS = ƒ(tp) Ptot RthJS 300 mW 200 150 100 50 00 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) 10 2 10 3 K/W 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Ptotmax/PtotDC - D=0 0.005 0.01 0.02 10 1 0.05 0.1 0.2 0.5 10 0 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2014-04-07 Package SOT143R BFP182R 5 2014-04-07 BFP182R Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2014-04-07 .


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