Document
BFP182T/BFP182TW/BFP182TRW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA.
Features
D Low power applications D Low noise figure D High transition frequency
2 1 1 2
13 653
13 566
13 654
13 566
3
4
4
3
BFP182TW Marking: W82 Plastic case (SOT 343) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
BFP182TRW Marking: WSG Plastic case (SOT 343R) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
2
1
94 9279
13 579
3
4
BFP182T Marking: 82P Plastic case (SOT 143) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Document Number 85013 Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600 1 (6)
BFP182T/BFP182TW/BFP182TRW
Vishay Telefunken Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 15 10 2 35 200 150 –65 to +150 Unit V V V mA mW °C °C
Tamb ≤ 60 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W
www.vishay.de • FaxBack +1-408-970-5600 2 (6)
Document Number 85013 Rev. 3, 20-Jan-99
BFP182T/BFP182TW/BFP182TRW
Vishay Telefunken Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test Conditions VCE = 15 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 IC = 15 mA, IB =1.5 mA VCE = 6 V, IC = 5 mA VCE = 8 V, IC = 20 mA Symbol Min Typ Max Unit ICES 100 mA ICBO 100 nA IEBO 1 mA V(BR)CEO 10 V VCEsat 0.1 0.4 V hFE 50 90 150 hFE 100
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified Parameter Transition frequency q y Test Conditions VCE = 6 V, IC = 5 mA, f = 500 MHz VCE = 8 V, IC = 20 mA, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 8 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure VCE = 6 V, IC = 5 mA, ZS = ZSopt, f = 900 MHz VCE = 6 V, IC = 5 mA, ZS = ZSopt, f = 1.75 GHz Power gain VCE = 8 V, IC = 20 mA, ZS = 50 W, ZL = ZLopt, f = 900 MHz VCE = 8 V, IC = 20 mA, ZS = 50 W, ZL = ZLopt, f = 1.75 GHz Transducer gain VCE = 8 V, IC = 20 mA, Z0 = 50 W, f = 900 MHz Symbol fT fT Ccb Cce Ceb F F Gpe Gpe S21e2 Min Typ 5.5 7.5 0.3 0.2 0.7 1.5 2.0 18 12 15 Max Unit GHz GHz pF pF pF dB dB dB dB dB
Document Number 85013 Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600 3 (6)
BFP182T/BFP182TW/BFP182TRW
Vishay Telefunken Dimensions of B.