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BFP182TRW Dataheets PDF



Part Number BFP182TRW
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Silicon NPN Planar RF Transistor
Datasheet BFP182TRW DatasheetBFP182TRW Datasheet (PDF)

BFP182T/BFP182TW/BFP182TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low power applications D Low noise figure D High transition frequency 2 1 1 2 13 653 13 566 13 654 13 566 3 4 4 3 BFP182TW Marking: W82 Plastic case (SOT 343) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter BFP182TRW Marking: .

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BFP182T/BFP182TW/BFP182TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features D Low power applications D Low noise figure D High transition frequency 2 1 1 2 13 653 13 566 13 654 13 566 3 4 4 3 BFP182TW Marking: W82 Plastic case (SOT 343) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter BFP182TRW Marking: WSG Plastic case (SOT 343R) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter 2 1 94 9279 13 579 3 4 BFP182T Marking: 82P Plastic case (SOT 143) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Document Number 85013 Rev. 3, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 1 (6) BFP182T/BFP182TW/BFP182TRW Vishay Telefunken Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 15 10 2 35 200 150 –65 to +150 Unit V V V mA mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W www.vishay.de • FaxBack +1-408-970-5600 2 (6) Document Number 85013 Rev. 3, 20-Jan-99 BFP182T/BFP182TW/BFP182TRW Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test Conditions VCE = 15 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 IC = 15 mA, IB =1.5 mA VCE = 6 V, IC = 5 mA VCE = 8 V, IC = 20 mA Symbol Min Typ Max Unit ICES 100 mA ICBO 100 nA IEBO 1 mA V(BR)CEO 10 V VCEsat 0.1 0.4 V hFE 50 90 150 hFE 100 Electrical AC Characteristics Tamb = 25_C, unless otherwise specified Parameter Transition frequency q y Test Conditions VCE = 6 V, IC = 5 mA, f = 500 MHz VCE = 8 V, IC = 20 mA, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 8 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure VCE = 6 V, IC = 5 mA, ZS = ZSopt, f = 900 MHz VCE = 6 V, IC = 5 mA, ZS = ZSopt, f = 1.75 GHz Power gain VCE = 8 V, IC = 20 mA, ZS = 50 W, ZL = ZLopt, f = 900 MHz VCE = 8 V, IC = 20 mA, ZS = 50 W, ZL = ZLopt, f = 1.75 GHz Transducer gain VCE = 8 V, IC = 20 mA, Z0 = 50 W, f = 900 MHz Symbol fT fT Ccb Cce Ceb F F Gpe Gpe S21e2 Min Typ 5.5 7.5 0.3 0.2 0.7 1.5 2.0 18 12 15 Max Unit GHz GHz pF pF pF dB dB dB dB dB Document Number 85013 Rev. 3, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 3 (6) BFP182T/BFP182TW/BFP182TRW Vishay Telefunken Dimensions of B.


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