BFP182W

Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available BFP182W 3 4 2 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP182W Marking Pin Configuration RGs 1=E 2=C 3=E 4 = B - - Package SOT343 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 91 °C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg Value 12 20 20 2 35 4 250 150 -55 ... 150 Unit V mA mW °C Thermal Resistance Parameter Symbol Value Junction - soldering point2) RthJS 235 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) Unit K/W 1 2013-07-25 BFP182W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 ...