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BFP183 Dataheets PDF



Part Number BFP183
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Low Noise Silicon Bipolar RF Transistor
Datasheet BFP183 DatasheetBFP183 Datasheet (PDF)

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available 3 4 BFP183 2 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP183 Marking Pin Configuration RHs 1=C 2=E 3=B 4=E - - Package SOT143 Maximum Ratings at TA = 25 °C, unless otherwise specified Par.

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Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available 3 4 BFP183 2 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP183 Marking Pin Configuration RHs 1=C 2=E 3=B 4=E - - Package SOT143 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 76 °C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg Value 12 20 20 2 65 5 250 150 -55 ... 150 Unit V mA mW °C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 295 K/W 1TS is measured on the collector lead at the soldering point to the.


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