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BFP22 Dataheets PDF



Part Number BFP22
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description NPN Silicon Transistors
Datasheet BFP22 DatasheetBFP22 Datasheet (PDF)

NPN Silicon Transistors with High Reverse Voltage High breakdown voltage q Low collector-emitter saturation voltage q Low capacitance q Complementary types: BFP 23, BFP 26 (PNP) q 1 3 2 BFP 22 BFP 25 Type BFP 22 BFP 25 Marking – Ordering Code (tape and reel) Q62702-F621 Q62702-F721 Pin Configuration 1 2 3 E B C Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base curr.

  BFP22   BFP22


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NPN Silicon Transistors with High Reverse Voltage High breakdown voltage q Low collector-emitter saturation voltage q Low capacitance q Complementary types: BFP 23, BFP 26 (PNP) q 1 3 2 BFP 22 BFP 25 Type BFP 22 BFP 25 Marking – Ordering Code (tape and reel) Q62702-F621 Q62702-F721 Pin Configuration 1 2 3 E B C Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Rth JA Rth JC ≤ ≤ Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values BFP 22 200 200 6 Unit BFP 25 300 300 200 500 100 200 625 150 mW ˚C mA V – 65 … + 150 200 135 K/W 1) 2) For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. BFP 22 BFP 25 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage BFP 22 IC = 1 mA BFP 25 Collector-base breakdown voltage BFP 22 IC = 100 µA BFP 25 Emitter-base breakdown voltage IE = 100 µA Collector-base cutoff current VCB = 160 V VCB = 250 V VCB = 160 V, TA = 150 ˚C VCB = 250 V, TA = 150 ˚C Emitter-base cutoff current VEB = 4 V DC current gain IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 30 mA, VCE = 10 V1) BFP 22 BFP 25 BFP 22 BFP 25 IEB0 hFE 25 40 50 40 VCEsat – – VBEsat – – – – 0.4 0.5 0.9 – – – – – – – – V V(BR)CE0 200 300 V(BR)CB0 200 300 V(BR)EB0 ICB0 – – – – – – – – – – 100 100 20 20 100 nA nA µA µA nA – 6 – – – – – – – – – – V Values typ. max. Unit BFP 22 BFP 25 Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA BFP 22 BFP 25 Base-emitter saturation voltage1) IC = 20 A, IB = 2 mA AC characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 20 MHz Output capacitance VCB = 30 V, f = 1 MHz fT Cobo – – 70 1.5 – – MHz pF 1) Pulse test conditions: t ≤ 300 µs, D ≤ 2 %. BFP 22 BFP 25 Total power dissipation Ptot = f (TA; TC) Operating range IC = f (VCE) D = 0, TA = 25 ˚C Permissible pulse load RthJA = f (tp) Collector current IC = f (VBE) VCE = 10 V, TA = 25 ˚C BFP 22 BFP 25 Collector cutoff current ICB0 = f (T) VCB = 160 V, 250 V DC current gain hFE = f (IC) VCE = 10 V, TA = 25 ˚C Transition frequency fT = f (IC) VCE = 10 V, f = 20 MHz .


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